Cargando…
Sensitive Molybdenum Disulfide Based Field Effect Transistor Sensor for Real-time Monitoring of Hydrogen Peroxide
A reliable and highly sensitive hydrogen peroxide (H(2)O(2)) field effect transistor (FET) sensor is reported, which was constructed by using molybdenum disulfide (MoS(2))/reduced graphene oxide (RGO). In this work, we prepared MoS(2) nanosheets by a simple liquid ultrasonication exfoliation method....
Autores principales: | Zheng, Chao, Jin, Xin, Li, Yutao, Mei, Junchi, Sun, Yujie, Xiao, Mengmeng, Zhang, Hong, Zhang, Zhiyong, Zhang, Guo-Jun |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6345991/ https://www.ncbi.nlm.nih.gov/pubmed/30679538 http://dx.doi.org/10.1038/s41598-018-36752-y |
Ejemplares similares
-
An Electrochemical Sensor Based on Chalcogenide Molybdenum Disulfide-Gold-Silver Nanocomposite for Detection of Hydrogen Peroxide Released by Cancer Cells
por: Hu, Jinchun, et al.
Publicado: (2020) -
Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts
por: Chai, Yu, et al.
Publicado: (2017) -
Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors
por: Shimazu, Yoshihiro, et al.
Publicado: (2016) -
Facile Exfoliation for High-Quality Molybdenum Disulfide Nanoflakes and Relevant Field-Effect Transistors Developed With Thermal Treatment
por: Zhang, Yu, et al.
Publicado: (2021) -
In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers
por: Tsai, Po-Cheng, et al.
Publicado: (2023)