Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors

We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension of Natori’s model and includes transmission probability and drain-channel coupling parameter. T...

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Detalles Bibliográficos
Autores principales: Lee, Ji Ung, Cuduvally, Ramya, Dhakras, Prathamesh, Nguyen, Phung, Hughes, Harold L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6346087/
https://www.ncbi.nlm.nih.gov/pubmed/30679517
http://dx.doi.org/10.1038/s41598-018-36692-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6346087/
https://www.ncbi.nlm.nih.gov/pubmed/30679517
http://dx.doi.org/10.1038/s41598-018-36692-7

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