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Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors
We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension of Natori’s model and includes transmission probability and drain-channel coupling parameter. T...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6346087/ https://www.ncbi.nlm.nih.gov/pubmed/30679517 http://dx.doi.org/10.1038/s41598-018-36692-7 |