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A self-reference false memory effect in the DRM paradigm: Evidence from Eastern and Western samples
It is well established that processing information in relation to oneself (i.e., self-referencing) leads to better memory for that information than processing that same information in relation to others (i.e., other-referencing). However, it is unknown whether self-referencing also leads to more fal...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6351515/ https://www.ncbi.nlm.nih.gov/pubmed/30141171 http://dx.doi.org/10.3758/s13421-018-0851-3 |
Sumario: | It is well established that processing information in relation to oneself (i.e., self-referencing) leads to better memory for that information than processing that same information in relation to others (i.e., other-referencing). However, it is unknown whether self-referencing also leads to more false memories than other-referencing does. In the current two experiments with European and East Asian samples, we presented participants the Deese–Roediger–McDermott lists together with their own name or other people’s name (i.e., “Trump” in Experiment 1 and “Li Ming” in Experiment 2). We found consistent results across the two experiments; that is, in the self-reference condition, participants had higher true and false memory rates compared with those in the other-reference condition. Moreover, we found that self-referencing did not exhibit superior mnemonic advantage in terms of net accuracy compared with other-referencing and neutral conditions. These findings are discussed in terms of theoretical frameworks such as spreading activation theories and the fuzzy-trace theory. We propose that our results reflect the adaptive nature of memory in the sense that cognitive processes that increase mnemonic efficiency may also increase susceptibility to associative false memories. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.3758/s13421-018-0851-3) contains supplementary material, which is available to authorized users. |
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