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Strong correlation between optical properties and mechanism in deficiency of normalized self-assembly ZnO nanorods

Although, post annealing is an efficient way to annihilate/restructure deficiencies in self-assembly (SA) ZnO nanorods (ZNRs), the detailed investigation about the surface properties of annealed SA-ZNRs is a long standing issue and the major discrepancy is mainly due to single step annealing. We dem...

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Detalles Bibliográficos
Autores principales: Chang, Feng-Ming, Brahma, Sanjaya, Huang, Jing-Heng, Wu, Zong-Zhe, Lo, Kuang-Yao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6351557/
https://www.ncbi.nlm.nih.gov/pubmed/30696935
http://dx.doi.org/10.1038/s41598-018-37601-8
Descripción
Sumario:Although, post annealing is an efficient way to annihilate/restructure deficiencies in self-assembly (SA) ZnO nanorods (ZNRs), the detailed investigation about the surface properties of annealed SA-ZNRs is a long standing issue and the major discrepancy is mainly due to single step annealing. We demonstrate the strategic two step annealing process to create reliable structural configuration in SA-ZNRs during the first round of annealing at 800 °C in vacuum (VA process), and create intrinsic defects in the second step of annealing in oxygen rich atmosphere (OA process) to correlate the formation of the defects related to green/orange-red emission. SA-ZNRs annealed in VA-OA processes reveal positive correlations between the oxygen flow rate and formation of oxygen interstitials (O(i)) and zinc vacancies (V(Zn)). The OA-VA processes exhibit the relation of residual O(i) and additional V(o). According to VA-OA and OA-VA processes, we propose that the green emission in ZnO annealed in oxygen poor/rich condition is mainly due to the formation of V(o)/V(Zn) and annealing at oxygen rich condition creates O(i) that lead to strong orange-red emission. Rather than O1s, we propose a reliable method by considering the peak shift of Zn2p in XPS to inspect the ZnO matrix, which has good interdependence with the characteristics of PL.