Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor

The change of electrical performance of amorphous SiZnSnO thin film transistors (a-SZTO TFTs) has been investigated depending on various metal capping layers on the channel layer by causing different contact property. It was confirmed that the change of electrical characteristics was sensitively dep...

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Detalles Bibliográficos
Autores principales: Lee, Byeong Hyeon, Sohn, Ahrum, Kim, Sangsig, Lee, Sang Yeol
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6351611/
https://www.ncbi.nlm.nih.gov/pubmed/30696893
http://dx.doi.org/10.1038/s41598-018-37530-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6351611/
https://www.ncbi.nlm.nih.gov/pubmed/30696893
http://dx.doi.org/10.1038/s41598-018-37530-6

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