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Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN
A novel overgrowth approach has been developed in order to create a multiple-facet structure consisting of only non-polar and semi-polar GaN facets without involving any c-plane facets, allowing the major drawbacks of utilising c-plane GaN for the growth of III-nitride optoelectronics to be eliminat...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6353934/ https://www.ncbi.nlm.nih.gov/pubmed/30700776 http://dx.doi.org/10.1038/s41598-018-37575-7 |
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author | Gong, Y. Jiu, L. Bruckbauer, J. Bai, J. Martin, R. W. Wang, T. |
author_facet | Gong, Y. Jiu, L. Bruckbauer, J. Bai, J. Martin, R. W. Wang, T. |
author_sort | Gong, Y. |
collection | PubMed |
description | A novel overgrowth approach has been developed in order to create a multiple-facet structure consisting of only non-polar and semi-polar GaN facets without involving any c-plane facets, allowing the major drawbacks of utilising c-plane GaN for the growth of III-nitride optoelectronics to be eliminated. Such a multiple-facet structure can be achieved by means of overgrowth on non-polar GaN micro-rod arrays on r-plane sapphire. InGaN multiple quantum wells (MQWs) are then grown on the multiple-facet templates. Due to the different efficiencies of indium incorporation on non-polar and semi-polar GaN facets, multiple-colour InGaN/GaN MQWs have been obtained. Photoluminescence (PL) measurements have demonstrated that the multiple-colour emissions with a tunable intensity ratio of different wavelength emissions can be achieved simply through controlling the overgrowth conditions. Detailed cathodoluminescence measurements and excitation-power dependent PL measurements have been performed, further validating the approach of employing the multiple facet templates for the growth of multiple colour InGaN/GaN MQWs. It is worth highlighting that the approach potentially paves the way for the growth of monolithic phosphor-free white emitters in the future. |
format | Online Article Text |
id | pubmed-6353934 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-63539342019-01-31 Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN Gong, Y. Jiu, L. Bruckbauer, J. Bai, J. Martin, R. W. Wang, T. Sci Rep Article A novel overgrowth approach has been developed in order to create a multiple-facet structure consisting of only non-polar and semi-polar GaN facets without involving any c-plane facets, allowing the major drawbacks of utilising c-plane GaN for the growth of III-nitride optoelectronics to be eliminated. Such a multiple-facet structure can be achieved by means of overgrowth on non-polar GaN micro-rod arrays on r-plane sapphire. InGaN multiple quantum wells (MQWs) are then grown on the multiple-facet templates. Due to the different efficiencies of indium incorporation on non-polar and semi-polar GaN facets, multiple-colour InGaN/GaN MQWs have been obtained. Photoluminescence (PL) measurements have demonstrated that the multiple-colour emissions with a tunable intensity ratio of different wavelength emissions can be achieved simply through controlling the overgrowth conditions. Detailed cathodoluminescence measurements and excitation-power dependent PL measurements have been performed, further validating the approach of employing the multiple facet templates for the growth of multiple colour InGaN/GaN MQWs. It is worth highlighting that the approach potentially paves the way for the growth of monolithic phosphor-free white emitters in the future. Nature Publishing Group UK 2019-01-30 /pmc/articles/PMC6353934/ /pubmed/30700776 http://dx.doi.org/10.1038/s41598-018-37575-7 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Gong, Y. Jiu, L. Bruckbauer, J. Bai, J. Martin, R. W. Wang, T. Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN |
title | Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN |
title_full | Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN |
title_fullStr | Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN |
title_full_unstemmed | Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN |
title_short | Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN |
title_sort | monolithic multiple colour emission from ingan grown on patterned non-polar gan |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6353934/ https://www.ncbi.nlm.nih.gov/pubmed/30700776 http://dx.doi.org/10.1038/s41598-018-37575-7 |
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