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Graphene/semi-insulating single crystal CdTe Schottky-type heterojunction X- and γ-Ray Radiation Detectors
We developed a new concept of X- and γ-ray radiation semiconductor detectors based on a large area graphene/semi-insulating single crystal CdTe Schottky-type heterojunction. These two terminal electronic devices can be easily fabricated by forming a Van der Waals contact between large area chemical...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6355853/ https://www.ncbi.nlm.nih.gov/pubmed/30705310 http://dx.doi.org/10.1038/s41598-018-37637-w |
Sumario: | We developed a new concept of X- and γ-ray radiation semiconductor detectors based on a large area graphene/semi-insulating single crystal CdTe Schottky-type heterojunction. These two terminal electronic devices can be easily fabricated by forming a Van der Waals contact between large area chemical vapor deposited graphene and CdTe substrates in air and at room temperature. This approach significantly reduces the fabrication cost and improves the reproducibility and stability of electrical properties. A detailed analysis of their AC and DC electrical properties was carried out in order to determine the width of the space charge region and dominant charge transport mechanisms at reverse bias. The unoptimized graphene/CdTe heterojunction detectors exhibited a promising spectral resolution of (241)Am (59 keV) and (137)Cs (662 keV) isotope radiation at room temperature. |
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