Noisy defects in the high-T(c) superconductor Bi(2)Sr(2)CaCu(2)O(8+x)

Dopants and impurities are crucial in shaping the ground state of host materials: semiconducting technology is based on their ability to donate or trap electrons, and they can even be used to transform insulators into high temperature superconductors. Due to limited time resolution, most atomic-scale studies of the latter materials focussed on the effect of dopants on the electronic properties averaged over time. Here, by using atomic-scale current-noise measurements in optimally doped Bi(2)Sr(2)CaCu(2)O(8+x), we visualize sub-nanometre sized objects where the tunnelling current-noise is enhanced by at least an order of magnitude. We show that these objects are previously undetected oxygen dopants whose ionization and local environment leads to unconventional charge dynamics resulting in correlated tunnelling events. The ionization of these dopants opens up new routes to dynamically control doping at the atomic scale, enabling the direct visualization of local charging on e.g. high-T(c) superconductivity.