Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) Transparent Conductive Electrode

We fabricated a complex transparent conductive electrode (TCE) based on Ga(2)O(3) for AlGaN-based ultraviolet light-emitting diodes. The complex TCE consists of a 10 nm ITO, a 15 nm Ga(2)O(3), a 7 nm Ag, and a 15 nm Ga(2)O(3), forming a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) multilayer. The metal layer embedded...

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Detalles Bibliográficos
Autores principales: Wang, Hong, Zhou, Quanbin, Liang, Siwei, Wen, Rulian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6358823/
https://www.ncbi.nlm.nih.gov/pubmed/30621281
http://dx.doi.org/10.3390/nano9010066
Descripción
Sumario:We fabricated a complex transparent conductive electrode (TCE) based on Ga(2)O(3) for AlGaN-based ultraviolet light-emitting diodes. The complex TCE consists of a 10 nm ITO, a 15 nm Ga(2)O(3), a 7 nm Ag, and a 15 nm Ga(2)O(3), forming a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) multilayer. The metal layer embedded into Ga(2)O(3) and the thin ITO contact layer improves current spreading and electrode contact properties. It is found that the ITO/Ga(2)O(3)/Ag/Ga(2)O(3) multilayer can reach a 92.8% transmittance at 365 nm and a specific contact resistance of 10(−3) Ω·cm(2) with suitable annealing conditions.

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