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Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) Transparent Conductive Electrode

We fabricated a complex transparent conductive electrode (TCE) based on Ga(2)O(3) for AlGaN-based ultraviolet light-emitting diodes. The complex TCE consists of a 10 nm ITO, a 15 nm Ga(2)O(3), a 7 nm Ag, and a 15 nm Ga(2)O(3), forming a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) multilayer. The metal layer embedded...

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Detalles Bibliográficos
Autores principales: Wang, Hong, Zhou, Quanbin, Liang, Siwei, Wen, Rulian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6358823/
https://www.ncbi.nlm.nih.gov/pubmed/30621281
http://dx.doi.org/10.3390/nano9010066
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author Wang, Hong
Zhou, Quanbin
Liang, Siwei
Wen, Rulian
author_facet Wang, Hong
Zhou, Quanbin
Liang, Siwei
Wen, Rulian
author_sort Wang, Hong
collection PubMed
description We fabricated a complex transparent conductive electrode (TCE) based on Ga(2)O(3) for AlGaN-based ultraviolet light-emitting diodes. The complex TCE consists of a 10 nm ITO, a 15 nm Ga(2)O(3), a 7 nm Ag, and a 15 nm Ga(2)O(3), forming a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) multilayer. The metal layer embedded into Ga(2)O(3) and the thin ITO contact layer improves current spreading and electrode contact properties. It is found that the ITO/Ga(2)O(3)/Ag/Ga(2)O(3) multilayer can reach a 92.8% transmittance at 365 nm and a specific contact resistance of 10(−3) Ω·cm(2) with suitable annealing conditions.
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spelling pubmed-63588232019-02-06 Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) Transparent Conductive Electrode Wang, Hong Zhou, Quanbin Liang, Siwei Wen, Rulian Nanomaterials (Basel) Article We fabricated a complex transparent conductive electrode (TCE) based on Ga(2)O(3) for AlGaN-based ultraviolet light-emitting diodes. The complex TCE consists of a 10 nm ITO, a 15 nm Ga(2)O(3), a 7 nm Ag, and a 15 nm Ga(2)O(3), forming a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) multilayer. The metal layer embedded into Ga(2)O(3) and the thin ITO contact layer improves current spreading and electrode contact properties. It is found that the ITO/Ga(2)O(3)/Ag/Ga(2)O(3) multilayer can reach a 92.8% transmittance at 365 nm and a specific contact resistance of 10(−3) Ω·cm(2) with suitable annealing conditions. MDPI 2019-01-05 /pmc/articles/PMC6358823/ /pubmed/30621281 http://dx.doi.org/10.3390/nano9010066 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wang, Hong
Zhou, Quanbin
Liang, Siwei
Wen, Rulian
Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) Transparent Conductive Electrode
title Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) Transparent Conductive Electrode
title_full Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) Transparent Conductive Electrode
title_fullStr Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) Transparent Conductive Electrode
title_full_unstemmed Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) Transparent Conductive Electrode
title_short Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga(2)O(3)/Ag/Ga(2)O(3) Transparent Conductive Electrode
title_sort fabrication and characterization of algan-based uv leds with a ito/ga(2)o(3)/ag/ga(2)o(3) transparent conductive electrode
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6358823/
https://www.ncbi.nlm.nih.gov/pubmed/30621281
http://dx.doi.org/10.3390/nano9010066
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