Enhanced Efficiency of MAPbI(3) Perovskite Solar Cells with FAPbX(3) Perovskite Quantum Dots

We describe a method to enhance power conversion efficiency (PCE) of MAPbI(3) perovskite solar cell by inserting a FAPbX(3) perovskite quantum dots (QD-FAPbX(3)) layer. The MAPbI(3) and QD-FAPbX(3) layers were prepared using a simple, rapid spin-coating method in a nitrogen-filled glove box. The solar cell structure consists of ITO/PEDOT:PSS/MAPbI(3)/QD-FAPbX(3)/C(60)/Ag, where PEDOT:PSS, MAPbI(3), QD-FAPbX(3), and C(60) were used as the hole transport layer, light-absorbing layer, absorption enhance layer, and electron transport layer, respectively. The MAPbI(3)/QD-FAPbX(3) solar cells exhibit a PCE of 7.59%, an open circuit voltage (Voc) of 0.9 V, a short-circuit current density (Jsc) of 17.4 mA/cm(2), and a fill factor (FF) of 48.6%, respectively.