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Increased Interfacial Area between Dielectric Layer and Electrode of Triboelectric Nanogenerator toward Robustness and Boosted Energy Output
Given the operation conditions wherein mechanical wear is inevitable, modifying bulk properties of the dielectric layer of a triboelectric nanogenerator (TENG) has been highlighted to boost its energy output. However, several concerns still remain in regards to the modification due to high-cost mate...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6359413/ https://www.ncbi.nlm.nih.gov/pubmed/30621319 http://dx.doi.org/10.3390/nano9010071 |
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author | Yoo, Donghyeon Go, Eun Yeong Choi, Dongwhi Lee, Jeong-Won Song, Insang Sim, Jae-Yoon Hwang, Woonbong Kim, Dong Sung |
author_facet | Yoo, Donghyeon Go, Eun Yeong Choi, Dongwhi Lee, Jeong-Won Song, Insang Sim, Jae-Yoon Hwang, Woonbong Kim, Dong Sung |
author_sort | Yoo, Donghyeon |
collection | PubMed |
description | Given the operation conditions wherein mechanical wear is inevitable, modifying bulk properties of the dielectric layer of a triboelectric nanogenerator (TENG) has been highlighted to boost its energy output. However, several concerns still remain in regards to the modification due to high-cost materials and cumbersome processes being required. Herein, we report TENG with a microstructured Al electrode (TENG_ME) as a new approach to modifying bulk properties of the dielectric layer. The microstructured Al electrode is utilized as a component of TENG to increase the interfacial area between the dielectric layer and electrode. Compared to the TENG with a flat Al electrode (TENG_F), the capacitance of TENG_ME is about 1.15 times higher than that of TENG_F, and the corresponding energy outputs of a TENG_ME are 117 μA and 71 V, each of which is over 1.2 times higher than that of the TENG_F. The robustness of TENG_ME is also confirmed in the measurement of energy outputs changing after sandpaper abrasion tests, repetitive contact, and separation (more than 10(5) cycles). The results imply that the robustness and long-lasting performance of the TENG_ME could be enough to apply in reliable auxiliary power sources for electronic devices. |
format | Online Article Text |
id | pubmed-6359413 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-63594132019-02-06 Increased Interfacial Area between Dielectric Layer and Electrode of Triboelectric Nanogenerator toward Robustness and Boosted Energy Output Yoo, Donghyeon Go, Eun Yeong Choi, Dongwhi Lee, Jeong-Won Song, Insang Sim, Jae-Yoon Hwang, Woonbong Kim, Dong Sung Nanomaterials (Basel) Article Given the operation conditions wherein mechanical wear is inevitable, modifying bulk properties of the dielectric layer of a triboelectric nanogenerator (TENG) has been highlighted to boost its energy output. However, several concerns still remain in regards to the modification due to high-cost materials and cumbersome processes being required. Herein, we report TENG with a microstructured Al electrode (TENG_ME) as a new approach to modifying bulk properties of the dielectric layer. The microstructured Al electrode is utilized as a component of TENG to increase the interfacial area between the dielectric layer and electrode. Compared to the TENG with a flat Al electrode (TENG_F), the capacitance of TENG_ME is about 1.15 times higher than that of TENG_F, and the corresponding energy outputs of a TENG_ME are 117 μA and 71 V, each of which is over 1.2 times higher than that of the TENG_F. The robustness of TENG_ME is also confirmed in the measurement of energy outputs changing after sandpaper abrasion tests, repetitive contact, and separation (more than 10(5) cycles). The results imply that the robustness and long-lasting performance of the TENG_ME could be enough to apply in reliable auxiliary power sources for electronic devices. MDPI 2019-01-06 /pmc/articles/PMC6359413/ /pubmed/30621319 http://dx.doi.org/10.3390/nano9010071 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Yoo, Donghyeon Go, Eun Yeong Choi, Dongwhi Lee, Jeong-Won Song, Insang Sim, Jae-Yoon Hwang, Woonbong Kim, Dong Sung Increased Interfacial Area between Dielectric Layer and Electrode of Triboelectric Nanogenerator toward Robustness and Boosted Energy Output |
title | Increased Interfacial Area between Dielectric Layer and Electrode of Triboelectric Nanogenerator toward Robustness and Boosted Energy Output |
title_full | Increased Interfacial Area between Dielectric Layer and Electrode of Triboelectric Nanogenerator toward Robustness and Boosted Energy Output |
title_fullStr | Increased Interfacial Area between Dielectric Layer and Electrode of Triboelectric Nanogenerator toward Robustness and Boosted Energy Output |
title_full_unstemmed | Increased Interfacial Area between Dielectric Layer and Electrode of Triboelectric Nanogenerator toward Robustness and Boosted Energy Output |
title_short | Increased Interfacial Area between Dielectric Layer and Electrode of Triboelectric Nanogenerator toward Robustness and Boosted Energy Output |
title_sort | increased interfacial area between dielectric layer and electrode of triboelectric nanogenerator toward robustness and boosted energy output |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6359413/ https://www.ncbi.nlm.nih.gov/pubmed/30621319 http://dx.doi.org/10.3390/nano9010071 |
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