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A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts
A novel high-performance rectangular gate U channel FET (RGUC FET) for extreme integrated distance between source and drain contacts is proposed in this paper. The RGUC FET represents nearly ideal subthreshold characteristics till the distance between source/drain (S/D) contacts reduced to 2 nm. Dif...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6362183/ https://www.ncbi.nlm.nih.gov/pubmed/30715600 http://dx.doi.org/10.1186/s11671-019-2879-0 |