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Confining vertical conducting filament for reliable resistive switching by using a Au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device
We had discovered novel resistance switching phenomena in SrCoO(x) epitaxial thin films. We have interpreted the results in terms of the topotactic phase transformation between their insulating brownmillerite phase and the conducting perovskite phase and the existence of a rather vertical conducting...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6362224/ https://www.ncbi.nlm.nih.gov/pubmed/30718689 http://dx.doi.org/10.1038/s41598-018-37986-6 |
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author | Nallagatla, Venkata Raveendra Jo, Janghyun Acharya, Susant Kumar Kim, Miyoung Jung, Chang Uk |
author_facet | Nallagatla, Venkata Raveendra Jo, Janghyun Acharya, Susant Kumar Kim, Miyoung Jung, Chang Uk |
author_sort | Nallagatla, Venkata Raveendra |
collection | PubMed |
description | We had discovered novel resistance switching phenomena in SrCoO(x) epitaxial thin films. We have interpreted the results in terms of the topotactic phase transformation between their insulating brownmillerite phase and the conducting perovskite phase and the existence of a rather vertical conducting filament due to its inherent layered structure. However, the rough interface observed between the SrCoO(x) and the Au top electrode (area ~10000 μm(2)) was assumed to result in the observed fluctuation in key switching parameters. In order to verify the effect of rough interface on the switching performance in the SrCoO(x) device, in this work, we studied the resistive switching properties of a SrCoO(x) device by placing a Au-coated tip (end area ~0.5 μm(2)) directly on the film surface as the top electrode. The resulting device displayed much improved endurance and showed high uniformity in key switching parameters as compared to the device having a large top electrode area. A simulation result confirmed that the Au-coated tip provides a local confinement of the electrical field, resulting in confinement of oxygen ion distribution and therefore localization of the conducting filament. By minimizing other free and uncontrollable parameters, the designed experiment here provides the most direct and isolated evidence that the rough interface between electrode and ReRAM matrix is detrimental for the reproducibility of resistivity switching phenomena. |
format | Online Article Text |
id | pubmed-6362224 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-63622242019-02-06 Confining vertical conducting filament for reliable resistive switching by using a Au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device Nallagatla, Venkata Raveendra Jo, Janghyun Acharya, Susant Kumar Kim, Miyoung Jung, Chang Uk Sci Rep Article We had discovered novel resistance switching phenomena in SrCoO(x) epitaxial thin films. We have interpreted the results in terms of the topotactic phase transformation between their insulating brownmillerite phase and the conducting perovskite phase and the existence of a rather vertical conducting filament due to its inherent layered structure. However, the rough interface observed between the SrCoO(x) and the Au top electrode (area ~10000 μm(2)) was assumed to result in the observed fluctuation in key switching parameters. In order to verify the effect of rough interface on the switching performance in the SrCoO(x) device, in this work, we studied the resistive switching properties of a SrCoO(x) device by placing a Au-coated tip (end area ~0.5 μm(2)) directly on the film surface as the top electrode. The resulting device displayed much improved endurance and showed high uniformity in key switching parameters as compared to the device having a large top electrode area. A simulation result confirmed that the Au-coated tip provides a local confinement of the electrical field, resulting in confinement of oxygen ion distribution and therefore localization of the conducting filament. By minimizing other free and uncontrollable parameters, the designed experiment here provides the most direct and isolated evidence that the rough interface between electrode and ReRAM matrix is detrimental for the reproducibility of resistivity switching phenomena. Nature Publishing Group UK 2019-02-04 /pmc/articles/PMC6362224/ /pubmed/30718689 http://dx.doi.org/10.1038/s41598-018-37986-6 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Nallagatla, Venkata Raveendra Jo, Janghyun Acharya, Susant Kumar Kim, Miyoung Jung, Chang Uk Confining vertical conducting filament for reliable resistive switching by using a Au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device |
title | Confining vertical conducting filament for reliable resistive switching by using a Au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device |
title_full | Confining vertical conducting filament for reliable resistive switching by using a Au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device |
title_fullStr | Confining vertical conducting filament for reliable resistive switching by using a Au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device |
title_full_unstemmed | Confining vertical conducting filament for reliable resistive switching by using a Au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device |
title_short | Confining vertical conducting filament for reliable resistive switching by using a Au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device |
title_sort | confining vertical conducting filament for reliable resistive switching by using a au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6362224/ https://www.ncbi.nlm.nih.gov/pubmed/30718689 http://dx.doi.org/10.1038/s41598-018-37986-6 |
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