Integration of LaMnO(3+δ) films on platinized silicon substrates for resistive switching applications by PI-MOCVD

The next generation of electronic devices requires faster operation velocity, higher storage capacity and reduction of the power consumption. In this context, resistive switching memory chips emerge as promising candidates for developing new non-volatile memory modules. Manganites have received incr...

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Detalles Bibliográficos
Autores principales: Rodriguez-Lamas, Raquel, Pla, Dolors, Chaix-Pluchery, Odette, Meunier, Benjamin, Wilhelm, Fabrice, Rogalev, Andrei, Rapenne, Laetitia, Mescot, Xavier, Rafhay, Quentin, Roussel, Hervé, Boudard, Michel, Jiménez, Carmen, Burriel, Mónica
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2019
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6369995/
https://www.ncbi.nlm.nih.gov/pubmed/30800578
http://dx.doi.org/10.3762/bjnano.10.38

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6369995/
https://www.ncbi.nlm.nih.gov/pubmed/30800578
http://dx.doi.org/10.3762/bjnano.10.38

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