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Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices
The electronic structure and conduction mechanism of chalcogenide-based Ovonic threshold switches (OTS) used as selectors in cross-point memory arrays is derived from density functional calculations and quasi-Fermi level models. The switching mechanism in OTS is primarily electronic. This uses a spe...
Autores principales: | Li, Huanglong, Robertson, John |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6372668/ https://www.ncbi.nlm.nih.gov/pubmed/30755641 http://dx.doi.org/10.1038/s41598-018-37717-x |
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