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Fabrication and Characterization of Indium Tin Oxide Films
BACKGROUND: Transparent conducting oxide (TCO) films are of particular interest in the field of optoelectronics, due to the requirement for transparent electrodes in applications such as organic light-emitting diodes, solar cells and so on. The aim of this study was to obtain a better understanding...
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
SAGE Publications
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6379771/ https://www.ncbi.nlm.nih.gov/pubmed/28430343 http://dx.doi.org/10.5301/jabfm.5000345 |
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author | Her, Shiuh-Chuan Chang, Chun-Fu |
author_facet | Her, Shiuh-Chuan Chang, Chun-Fu |
author_sort | Her, Shiuh-Chuan |
collection | PubMed |
description | BACKGROUND: Transparent conducting oxide (TCO) films are of particular interest in the field of optoelectronics, due to the requirement for transparent electrodes in applications such as organic light-emitting diodes, solar cells and so on. The aim of this study was to obtain a better understanding of the effects of preparation temperature on indium tin oxide (ITO) films, to improve their performance for optoelectronic applications. METHODS: ITO films were deposited on glass substrate at different temperatures, using direct current (DC) magnetron sputtering. The influence of substrate temperature on the microstructure and electrical and optical properties was studied. The surface topography and microstructure of the films were analyzed by atomic force microscopy. The electrical resistivity and optical transmittance of the films were measured using the Hall effect measurement and spectrometer, respectively. RESULTS: The results showed that both the surface roughness and film thickness increased as the substrate temperature increased. Transmittance increased from 78% to 80% in the visible wavelength region, while resistivity decreased from 6.05 × 10(−4) to 3.27 × 10(−4) Ω-cm as the substrate temperature increased from 25°C to 275°C. CONCLUSIONS: High-quality ITO films with low resistivity and high transmittance can be achieved by increasing the deposition temperature. |
format | Online Article Text |
id | pubmed-6379771 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | SAGE Publications |
record_format | MEDLINE/PubMed |
spelling | pubmed-63797712019-06-03 Fabrication and Characterization of Indium Tin Oxide Films Her, Shiuh-Chuan Chang, Chun-Fu J Appl Biomater Funct Mater Original Research Article BACKGROUND: Transparent conducting oxide (TCO) films are of particular interest in the field of optoelectronics, due to the requirement for transparent electrodes in applications such as organic light-emitting diodes, solar cells and so on. The aim of this study was to obtain a better understanding of the effects of preparation temperature on indium tin oxide (ITO) films, to improve their performance for optoelectronic applications. METHODS: ITO films were deposited on glass substrate at different temperatures, using direct current (DC) magnetron sputtering. The influence of substrate temperature on the microstructure and electrical and optical properties was studied. The surface topography and microstructure of the films were analyzed by atomic force microscopy. The electrical resistivity and optical transmittance of the films were measured using the Hall effect measurement and spectrometer, respectively. RESULTS: The results showed that both the surface roughness and film thickness increased as the substrate temperature increased. Transmittance increased from 78% to 80% in the visible wavelength region, while resistivity decreased from 6.05 × 10(−4) to 3.27 × 10(−4) Ω-cm as the substrate temperature increased from 25°C to 275°C. CONCLUSIONS: High-quality ITO films with low resistivity and high transmittance can be achieved by increasing the deposition temperature. SAGE Publications 2017-04-05 2017-04 /pmc/articles/PMC6379771/ /pubmed/28430343 http://dx.doi.org/10.5301/jabfm.5000345 Text en © 2017 The Authors http://www.creativecommons.org/licenses/by-nc-nd/4.0/ This article is distributed under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs 4.0 License (http://www.creativecommons.org/licenses/by-nc-nd/4.0/) which permits non-commercial use, reproduction and distribution of the work as published without adaptation or alteration, without further permission provided the original work is attributed as specified on the SAGE and Open Access page (https://us.sagepub.com/en-us/nam/open-access-at-sage). |
spellingShingle | Original Research Article Her, Shiuh-Chuan Chang, Chun-Fu Fabrication and Characterization of Indium Tin Oxide Films |
title | Fabrication and Characterization of Indium Tin Oxide
Films |
title_full | Fabrication and Characterization of Indium Tin Oxide
Films |
title_fullStr | Fabrication and Characterization of Indium Tin Oxide
Films |
title_full_unstemmed | Fabrication and Characterization of Indium Tin Oxide
Films |
title_short | Fabrication and Characterization of Indium Tin Oxide
Films |
title_sort | fabrication and characterization of indium tin oxide
films |
topic | Original Research Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6379771/ https://www.ncbi.nlm.nih.gov/pubmed/28430343 http://dx.doi.org/10.5301/jabfm.5000345 |
work_keys_str_mv | AT hershiuhchuan fabricationandcharacterizationofindiumtinoxidefilms AT changchunfu fabricationandcharacterizationofindiumtinoxidefilms |