Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The i...

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Detalles Bibliográficos
Autores principales: Seppänen, Heli, Kim, Iurii, Etula, Jarkko, Ubyivovk, Evgeniy, Bouravleuv, Alexei, Lipsanen, Harri
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6384632/
https://www.ncbi.nlm.nih.gov/pubmed/30696077
http://dx.doi.org/10.3390/ma12030406

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6384632/
https://www.ncbi.nlm.nih.gov/pubmed/30696077
http://dx.doi.org/10.3390/ma12030406

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