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Investigation of Ferroelectric Grain Sizes and Orientations in Pt/Ca(x)Sr(1–x)Bi(2)Ta(2)O(9)/Hf–Al–O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors

Electron backscatter diffraction (EBSD) was applied to investigate the grain size and orientation of polycrystalline Ca(x)Sr(1–x)Bi(2)Ta(2)O(9) (C(x)S(1–x)BT) films in ferroelectric-gate field-effect transistors (FeFETs). The C(x)S(1–x)BT FeFETs with x = 0, 0.1, 0.2, 0.5, and 1 were characterized by...

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Detalles Bibliográficos
Autores principales:	Zhang, Wei, Takahashi, Mitsue, Sakai, Shigeki
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6384866/ https://www.ncbi.nlm.nih.gov/pubmed/30696011 http://dx.doi.org/10.3390/ma12030399

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