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Probing vacancy behavior across complex oxide heterointerfaces
Oxygen vacancies ([Formula: see text]) play a critical role as defects in complex oxides in establishing functionality in systems including memristors, all-oxide electronics, and electrochemical cells that comprise metal-insulator-metal or complex oxide heterostructure configurations. Improving oxid...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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American Association for the Advancement of Science
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6386560/ https://www.ncbi.nlm.nih.gov/pubmed/30801011 http://dx.doi.org/10.1126/sciadv.aau8467 |
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author | Zhu, Jiaxin Lee, Jung-Woo Lee, Hyungwoo Xie, Lin Pan, Xiaoqing De Souza, Roger A. Eom, Chang-Beom Nonnenmann, Stephen S. |
author_facet | Zhu, Jiaxin Lee, Jung-Woo Lee, Hyungwoo Xie, Lin Pan, Xiaoqing De Souza, Roger A. Eom, Chang-Beom Nonnenmann, Stephen S. |
author_sort | Zhu, Jiaxin |
collection | PubMed |
description | Oxygen vacancies ([Formula: see text]) play a critical role as defects in complex oxides in establishing functionality in systems including memristors, all-oxide electronics, and electrochemical cells that comprise metal-insulator-metal or complex oxide heterostructure configurations. Improving oxide-oxide interfaces necessitates a direct, spatial understanding of vacancy distributions that define electrochemically active regions. We show vacancies deplete over micrometer-level distances in Nb-doped SrTiO(3) (Nb:SrTiO(3)) substrates due to deposition and post-annealing processes. We convert the surface potential across a strontium titanate/yttria-stabilized zirconia (STO/YSZ) heterostructured film to spatial (<100 nm) vacancy profiles within STO using (T = 500°C) in situ scanning probes and semiconductor analysis. Oxygen scavenging occurring during pulsed laser deposition reduces Nb:STO substantially, which partially reoxidizes in an oxygen-rich environment upon cooling. These results (i) introduce the means to spatially resolve quantitative vacancy distributions across oxide films and (ii) indicate the mechanisms by which oxide thin films enhance and then deplete vacancies within the underlying substrate. |
format | Online Article Text |
id | pubmed-6386560 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | American Association for the Advancement of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-63865602019-02-23 Probing vacancy behavior across complex oxide heterointerfaces Zhu, Jiaxin Lee, Jung-Woo Lee, Hyungwoo Xie, Lin Pan, Xiaoqing De Souza, Roger A. Eom, Chang-Beom Nonnenmann, Stephen S. Sci Adv Research Articles Oxygen vacancies ([Formula: see text]) play a critical role as defects in complex oxides in establishing functionality in systems including memristors, all-oxide electronics, and electrochemical cells that comprise metal-insulator-metal or complex oxide heterostructure configurations. Improving oxide-oxide interfaces necessitates a direct, spatial understanding of vacancy distributions that define electrochemically active regions. We show vacancies deplete over micrometer-level distances in Nb-doped SrTiO(3) (Nb:SrTiO(3)) substrates due to deposition and post-annealing processes. We convert the surface potential across a strontium titanate/yttria-stabilized zirconia (STO/YSZ) heterostructured film to spatial (<100 nm) vacancy profiles within STO using (T = 500°C) in situ scanning probes and semiconductor analysis. Oxygen scavenging occurring during pulsed laser deposition reduces Nb:STO substantially, which partially reoxidizes in an oxygen-rich environment upon cooling. These results (i) introduce the means to spatially resolve quantitative vacancy distributions across oxide films and (ii) indicate the mechanisms by which oxide thin films enhance and then deplete vacancies within the underlying substrate. American Association for the Advancement of Science 2019-02-22 /pmc/articles/PMC6386560/ /pubmed/30801011 http://dx.doi.org/10.1126/sciadv.aau8467 Text en Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited. |
spellingShingle | Research Articles Zhu, Jiaxin Lee, Jung-Woo Lee, Hyungwoo Xie, Lin Pan, Xiaoqing De Souza, Roger A. Eom, Chang-Beom Nonnenmann, Stephen S. Probing vacancy behavior across complex oxide heterointerfaces |
title | Probing vacancy behavior across complex oxide heterointerfaces |
title_full | Probing vacancy behavior across complex oxide heterointerfaces |
title_fullStr | Probing vacancy behavior across complex oxide heterointerfaces |
title_full_unstemmed | Probing vacancy behavior across complex oxide heterointerfaces |
title_short | Probing vacancy behavior across complex oxide heterointerfaces |
title_sort | probing vacancy behavior across complex oxide heterointerfaces |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6386560/ https://www.ncbi.nlm.nih.gov/pubmed/30801011 http://dx.doi.org/10.1126/sciadv.aau8467 |
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