Cargando…

Probing vacancy behavior across complex oxide heterointerfaces

Oxygen vacancies ([Formula: see text]) play a critical role as defects in complex oxides in establishing functionality in systems including memristors, all-oxide electronics, and electrochemical cells that comprise metal-insulator-metal or complex oxide heterostructure configurations. Improving oxid...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhu, Jiaxin, Lee, Jung-Woo, Lee, Hyungwoo, Xie, Lin, Pan, Xiaoqing, De Souza, Roger A., Eom, Chang-Beom, Nonnenmann, Stephen S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6386560/
https://www.ncbi.nlm.nih.gov/pubmed/30801011
http://dx.doi.org/10.1126/sciadv.aau8467
_version_ 1783397400553979904
author Zhu, Jiaxin
Lee, Jung-Woo
Lee, Hyungwoo
Xie, Lin
Pan, Xiaoqing
De Souza, Roger A.
Eom, Chang-Beom
Nonnenmann, Stephen S.
author_facet Zhu, Jiaxin
Lee, Jung-Woo
Lee, Hyungwoo
Xie, Lin
Pan, Xiaoqing
De Souza, Roger A.
Eom, Chang-Beom
Nonnenmann, Stephen S.
author_sort Zhu, Jiaxin
collection PubMed
description Oxygen vacancies ([Formula: see text]) play a critical role as defects in complex oxides in establishing functionality in systems including memristors, all-oxide electronics, and electrochemical cells that comprise metal-insulator-metal or complex oxide heterostructure configurations. Improving oxide-oxide interfaces necessitates a direct, spatial understanding of vacancy distributions that define electrochemically active regions. We show vacancies deplete over micrometer-level distances in Nb-doped SrTiO(3) (Nb:SrTiO(3)) substrates due to deposition and post-annealing processes. We convert the surface potential across a strontium titanate/yttria-stabilized zirconia (STO/YSZ) heterostructured film to spatial (<100 nm) vacancy profiles within STO using (T = 500°C) in situ scanning probes and semiconductor analysis. Oxygen scavenging occurring during pulsed laser deposition reduces Nb:STO substantially, which partially reoxidizes in an oxygen-rich environment upon cooling. These results (i) introduce the means to spatially resolve quantitative vacancy distributions across oxide films and (ii) indicate the mechanisms by which oxide thin films enhance and then deplete vacancies within the underlying substrate.
format Online
Article
Text
id pubmed-6386560
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher American Association for the Advancement of Science
record_format MEDLINE/PubMed
spelling pubmed-63865602019-02-23 Probing vacancy behavior across complex oxide heterointerfaces Zhu, Jiaxin Lee, Jung-Woo Lee, Hyungwoo Xie, Lin Pan, Xiaoqing De Souza, Roger A. Eom, Chang-Beom Nonnenmann, Stephen S. Sci Adv Research Articles Oxygen vacancies ([Formula: see text]) play a critical role as defects in complex oxides in establishing functionality in systems including memristors, all-oxide electronics, and electrochemical cells that comprise metal-insulator-metal or complex oxide heterostructure configurations. Improving oxide-oxide interfaces necessitates a direct, spatial understanding of vacancy distributions that define electrochemically active regions. We show vacancies deplete over micrometer-level distances in Nb-doped SrTiO(3) (Nb:SrTiO(3)) substrates due to deposition and post-annealing processes. We convert the surface potential across a strontium titanate/yttria-stabilized zirconia (STO/YSZ) heterostructured film to spatial (<100 nm) vacancy profiles within STO using (T = 500°C) in situ scanning probes and semiconductor analysis. Oxygen scavenging occurring during pulsed laser deposition reduces Nb:STO substantially, which partially reoxidizes in an oxygen-rich environment upon cooling. These results (i) introduce the means to spatially resolve quantitative vacancy distributions across oxide films and (ii) indicate the mechanisms by which oxide thin films enhance and then deplete vacancies within the underlying substrate. American Association for the Advancement of Science 2019-02-22 /pmc/articles/PMC6386560/ /pubmed/30801011 http://dx.doi.org/10.1126/sciadv.aau8467 Text en Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
spellingShingle Research Articles
Zhu, Jiaxin
Lee, Jung-Woo
Lee, Hyungwoo
Xie, Lin
Pan, Xiaoqing
De Souza, Roger A.
Eom, Chang-Beom
Nonnenmann, Stephen S.
Probing vacancy behavior across complex oxide heterointerfaces
title Probing vacancy behavior across complex oxide heterointerfaces
title_full Probing vacancy behavior across complex oxide heterointerfaces
title_fullStr Probing vacancy behavior across complex oxide heterointerfaces
title_full_unstemmed Probing vacancy behavior across complex oxide heterointerfaces
title_short Probing vacancy behavior across complex oxide heterointerfaces
title_sort probing vacancy behavior across complex oxide heterointerfaces
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6386560/
https://www.ncbi.nlm.nih.gov/pubmed/30801011
http://dx.doi.org/10.1126/sciadv.aau8467
work_keys_str_mv AT zhujiaxin probingvacancybehavioracrosscomplexoxideheterointerfaces
AT leejungwoo probingvacancybehavioracrosscomplexoxideheterointerfaces
AT leehyungwoo probingvacancybehavioracrosscomplexoxideheterointerfaces
AT xielin probingvacancybehavioracrosscomplexoxideheterointerfaces
AT panxiaoqing probingvacancybehavioracrosscomplexoxideheterointerfaces
AT desouzarogera probingvacancybehavioracrosscomplexoxideheterointerfaces
AT eomchangbeom probingvacancybehavioracrosscomplexoxideheterointerfaces
AT nonnenmannstephens probingvacancybehavioracrosscomplexoxideheterointerfaces