Probing vacancy behavior across complex oxide heterointerfaces

Oxygen vacancies ([Formula: see text]) play a critical role as defects in complex oxides in establishing functionality in systems including memristors, all-oxide electronics, and electrochemical cells that comprise metal-insulator-metal or complex oxide heterostructure configurations. Improving oxid...

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Detalles Bibliográficos
Autores principales: Zhu, Jiaxin, Lee, Jung-Woo, Lee, Hyungwoo, Xie, Lin, Pan, Xiaoqing, De Souza, Roger A., Eom, Chang-Beom, Nonnenmann, Stephen S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2019
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6386560/
https://www.ncbi.nlm.nih.gov/pubmed/30801011
http://dx.doi.org/10.1126/sciadv.aau8467

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6386560/
https://www.ncbi.nlm.nih.gov/pubmed/30801011
http://dx.doi.org/10.1126/sciadv.aau8467

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