Computing of temporal information in spiking neural networks with ReRAM synapses

Resistive switching random-access memory (ReRAM) is a two-terminal device based on ion migration to induce resistance switching between a high resistance state (HRS) and a low resistance state (LRS). ReRAM is considered one of the most promising technologies for artificial synapses in brain-inspired...

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Detalles Bibliográficos
Autores principales: Wang, W., Pedretti, G., Milo, V., Carboni, R., Calderoni, A., Ramaswamy, N., Spinelli, A. S., Ielmini, D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6390697/
https://www.ncbi.nlm.nih.gov/pubmed/30361729
http://dx.doi.org/10.1039/c8fd00097b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6390697/
https://www.ncbi.nlm.nih.gov/pubmed/30361729
http://dx.doi.org/10.1039/c8fd00097b

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