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Computing of temporal information in spiking neural networks with ReRAM synapses

Resistive switching random-access memory (ReRAM) is a two-terminal device based on ion migration to induce resistance switching between a high resistance state (HRS) and a low resistance state (LRS). ReRAM is considered one of the most promising technologies for artificial synapses in brain-inspired...

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Detalles Bibliográficos
Autores principales:	Wang, W., Pedretti, G., Milo, V., Carboni, R., Calderoni, A., Ramaswamy, N., Spinelli, A. S., Ielmini, D.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Royal Society of Chemistry 2019
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6390697/ https://www.ncbi.nlm.nih.gov/pubmed/30361729 http://dx.doi.org/10.1039/c8fd00097b

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