Cargando…

Gate-Tunable Plasmon-Induced Transparency Modulator Based on Stub-Resonator Waveguide with Epsilon-Near-Zero Materials

We demonstrate an electrically tunable ultracompact plasmonic modulator with large modulation strength (>10 dB) and a small footprint (~1 μm in length) via plasmon-induced transparency (PIT) configuration. The modulator based on a metal-oxide-semiconductor (MOS) slot waveguide structure consists...

Descripción completa

Detalles Bibliográficos
Autores principales: Tao, Long, Anopchenko, Aleksei, Gurung, Sudip, Zhang, Jinqiannan, Lee, Ho Wai Howard
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6391484/
https://www.ncbi.nlm.nih.gov/pubmed/30808945
http://dx.doi.org/10.1038/s41598-019-39047-y
_version_ 1783398318834974720
author Tao, Long
Anopchenko, Aleksei
Gurung, Sudip
Zhang, Jinqiannan
Lee, Ho Wai Howard
author_facet Tao, Long
Anopchenko, Aleksei
Gurung, Sudip
Zhang, Jinqiannan
Lee, Ho Wai Howard
author_sort Tao, Long
collection PubMed
description We demonstrate an electrically tunable ultracompact plasmonic modulator with large modulation strength (>10 dB) and a small footprint (~1 μm in length) via plasmon-induced transparency (PIT) configuration. The modulator based on a metal-oxide-semiconductor (MOS) slot waveguide structure consists of two stubs embedded on the same side of a bus waveguide forming a coupled system. Heavily n-doped indium tin oxide (ITO) is used as the semiconductor in the MOS waveguide. A large modulation strength is realized due to the formation of the epsilon-near-zero (ENZ) layer at the ITO-oxide interface at the wavelength of the modulated signal. Numerical simulation results reveal that such a significant modulation can be achieved with a small applied voltage of ~3V. This result shows promise in developing nanoscale modulators for next generation compact photonic/plasmonic integrated circuits.
format Online
Article
Text
id pubmed-6391484
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-63914842019-03-01 Gate-Tunable Plasmon-Induced Transparency Modulator Based on Stub-Resonator Waveguide with Epsilon-Near-Zero Materials Tao, Long Anopchenko, Aleksei Gurung, Sudip Zhang, Jinqiannan Lee, Ho Wai Howard Sci Rep Article We demonstrate an electrically tunable ultracompact plasmonic modulator with large modulation strength (>10 dB) and a small footprint (~1 μm in length) via plasmon-induced transparency (PIT) configuration. The modulator based on a metal-oxide-semiconductor (MOS) slot waveguide structure consists of two stubs embedded on the same side of a bus waveguide forming a coupled system. Heavily n-doped indium tin oxide (ITO) is used as the semiconductor in the MOS waveguide. A large modulation strength is realized due to the formation of the epsilon-near-zero (ENZ) layer at the ITO-oxide interface at the wavelength of the modulated signal. Numerical simulation results reveal that such a significant modulation can be achieved with a small applied voltage of ~3V. This result shows promise in developing nanoscale modulators for next generation compact photonic/plasmonic integrated circuits. Nature Publishing Group UK 2019-02-26 /pmc/articles/PMC6391484/ /pubmed/30808945 http://dx.doi.org/10.1038/s41598-019-39047-y Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Tao, Long
Anopchenko, Aleksei
Gurung, Sudip
Zhang, Jinqiannan
Lee, Ho Wai Howard
Gate-Tunable Plasmon-Induced Transparency Modulator Based on Stub-Resonator Waveguide with Epsilon-Near-Zero Materials
title Gate-Tunable Plasmon-Induced Transparency Modulator Based on Stub-Resonator Waveguide with Epsilon-Near-Zero Materials
title_full Gate-Tunable Plasmon-Induced Transparency Modulator Based on Stub-Resonator Waveguide with Epsilon-Near-Zero Materials
title_fullStr Gate-Tunable Plasmon-Induced Transparency Modulator Based on Stub-Resonator Waveguide with Epsilon-Near-Zero Materials
title_full_unstemmed Gate-Tunable Plasmon-Induced Transparency Modulator Based on Stub-Resonator Waveguide with Epsilon-Near-Zero Materials
title_short Gate-Tunable Plasmon-Induced Transparency Modulator Based on Stub-Resonator Waveguide with Epsilon-Near-Zero Materials
title_sort gate-tunable plasmon-induced transparency modulator based on stub-resonator waveguide with epsilon-near-zero materials
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6391484/
https://www.ncbi.nlm.nih.gov/pubmed/30808945
http://dx.doi.org/10.1038/s41598-019-39047-y
work_keys_str_mv AT taolong gatetunableplasmoninducedtransparencymodulatorbasedonstubresonatorwaveguidewithepsilonnearzeromaterials
AT anopchenkoaleksei gatetunableplasmoninducedtransparencymodulatorbasedonstubresonatorwaveguidewithepsilonnearzeromaterials
AT gurungsudip gatetunableplasmoninducedtransparencymodulatorbasedonstubresonatorwaveguidewithepsilonnearzeromaterials
AT zhangjinqiannan gatetunableplasmoninducedtransparencymodulatorbasedonstubresonatorwaveguidewithepsilonnearzeromaterials
AT leehowaihoward gatetunableplasmoninducedtransparencymodulatorbasedonstubresonatorwaveguidewithepsilonnearzeromaterials