Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta(2)O(5)-Al(2)O(3) Films Grown on Silicon by Atomic Layer Deposition

Nanolayered Ta(2)O(5)-Al(2)O(3) composite films were grown on n-type silicon by atomic layer deposition (ALD) within the overlapped ALD window of 220–270 °C. Moreover, post-annealing treatment was carried out to eliminate defects and improve film quality. Nanolayered Ta(2)O(5)-Al(2)O(3) composite fi...

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Detalles Bibliográficos
Autores principales: Li, Junpeng, Wu, Jianzhuo, Liu, Junqing, Sun, Jiaming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6399370/
https://www.ncbi.nlm.nih.gov/pubmed/30830448
http://dx.doi.org/10.1186/s11671-019-2907-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6399370/
https://www.ncbi.nlm.nih.gov/pubmed/30830448
http://dx.doi.org/10.1186/s11671-019-2907-0

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