CsGa(HAsO(4))(2), the first Ga representative of the RbAl(HAsO(4))(2) structure type

The crystal structure of hydro­thermally synthesized (T = 493 K, 7 d) caesium gallium bis­[hydrogen arsenate(V)], CsGa(HAsO(4))(2), was solved by single-crystal X-ray diffraction. The compound crystallizes in the common RbAl(HAsO(4))(2) structure type (R32) and consists of a basic tetra­hedral–octa­...

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Detalles Bibliográficos
Autores principales: Schwendtner, Karolina, Kolitsch, Uwe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2019
Materias:
Research Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6399695/
https://www.ncbi.nlm.nih.gov/pubmed/30867946
http://dx.doi.org/10.1107/S2056989019002081
Descripción
Sumario:The crystal structure of hydro­thermally synthesized (T = 493 K, 7 d) caesium gallium bis­[hydrogen arsenate(V)], CsGa(HAsO(4))(2), was solved by single-crystal X-ray diffraction. The compound crystallizes in the common RbAl(HAsO(4))(2) structure type (R32) and consists of a basic tetra­hedral–octa­hedral framework topology that houses Cs(+) cations in its channels. The AsO(4) tetra­hedron is disordered over two positions with site occupancy factors of 0.946 (1) and 0.054 (1). Strong hydrogen bonds strengthen the network. The structure was refined as inversion twin.

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