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CsGa(HAsO(4))(2), the first Ga representative of the RbAl(HAsO(4))(2) structure type

The crystal structure of hydro­thermally synthesized (T = 493 K, 7 d) caesium gallium bis­[hydrogen arsenate(V)], CsGa(HAsO(4))(2), was solved by single-crystal X-ray diffraction. The compound crystallizes in the common RbAl(HAsO(4))(2) structure type (R32) and consists of a basic tetra­hedral–octa­...

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Detalles Bibliográficos
Autores principales: Schwendtner, Karolina, Kolitsch, Uwe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6399695/
https://www.ncbi.nlm.nih.gov/pubmed/30867946
http://dx.doi.org/10.1107/S2056989019002081
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author Schwendtner, Karolina
Kolitsch, Uwe
author_facet Schwendtner, Karolina
Kolitsch, Uwe
author_sort Schwendtner, Karolina
collection PubMed
description The crystal structure of hydro­thermally synthesized (T = 493 K, 7 d) caesium gallium bis­[hydrogen arsenate(V)], CsGa(HAsO(4))(2), was solved by single-crystal X-ray diffraction. The compound crystallizes in the common RbAl(HAsO(4))(2) structure type (R32) and consists of a basic tetra­hedral–octa­hedral framework topology that houses Cs(+) cations in its channels. The AsO(4) tetra­hedron is disordered over two positions with site occupancy factors of 0.946 (1) and 0.054 (1). Strong hydrogen bonds strengthen the network. The structure was refined as inversion twin.
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spelling pubmed-63996952019-03-13 CsGa(HAsO(4))(2), the first Ga representative of the RbAl(HAsO(4))(2) structure type Schwendtner, Karolina Kolitsch, Uwe Acta Crystallogr E Crystallogr Commun Research Communications The crystal structure of hydro­thermally synthesized (T = 493 K, 7 d) caesium gallium bis­[hydrogen arsenate(V)], CsGa(HAsO(4))(2), was solved by single-crystal X-ray diffraction. The compound crystallizes in the common RbAl(HAsO(4))(2) structure type (R32) and consists of a basic tetra­hedral–octa­hedral framework topology that houses Cs(+) cations in its channels. The AsO(4) tetra­hedron is disordered over two positions with site occupancy factors of 0.946 (1) and 0.054 (1). Strong hydrogen bonds strengthen the network. The structure was refined as inversion twin. International Union of Crystallography 2019-02-08 /pmc/articles/PMC6399695/ /pubmed/30867946 http://dx.doi.org/10.1107/S2056989019002081 Text en © Schwendtner and Kolitsch 2019 http://creativecommons.org/licenses/by/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution (CC-BY) Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited.http://creativecommons.org/licenses/by/4.0/
spellingShingle Research Communications
Schwendtner, Karolina
Kolitsch, Uwe
CsGa(HAsO(4))(2), the first Ga representative of the RbAl(HAsO(4))(2) structure type
title CsGa(HAsO(4))(2), the first Ga representative of the RbAl(HAsO(4))(2) structure type
title_full CsGa(HAsO(4))(2), the first Ga representative of the RbAl(HAsO(4))(2) structure type
title_fullStr CsGa(HAsO(4))(2), the first Ga representative of the RbAl(HAsO(4))(2) structure type
title_full_unstemmed CsGa(HAsO(4))(2), the first Ga representative of the RbAl(HAsO(4))(2) structure type
title_short CsGa(HAsO(4))(2), the first Ga representative of the RbAl(HAsO(4))(2) structure type
title_sort csga(haso(4))(2), the first ga representative of the rbal(haso(4))(2) structure type
topic Research Communications
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6399695/
https://www.ncbi.nlm.nih.gov/pubmed/30867946
http://dx.doi.org/10.1107/S2056989019002081
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