Cargando…
Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer
Here we demonstrate high-brightness InGaN/GaN green light emitting diodes (LEDs) with in-situ low-temperature GaN (LT-GaN) nucleation layer (NL) and ex-situ sputtered AlN NL on 4-inch patterned sapphire substrate. Compared to green LEDs on LT-GaN (19 nm)/sapphire template, green LEDs on sputtered Al...
Autores principales: | , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6401382/ https://www.ncbi.nlm.nih.gov/pubmed/30837579 http://dx.doi.org/10.1038/s41598-019-40120-9 |
_version_ | 1783400127645351936 |
---|---|
author | Hu, Hongpo Zhou, Shengjun Wan, Hui Liu, Xingtong Li, Ning Xu, Haohao |
author_facet | Hu, Hongpo Zhou, Shengjun Wan, Hui Liu, Xingtong Li, Ning Xu, Haohao |
author_sort | Hu, Hongpo |
collection | PubMed |
description | Here we demonstrate high-brightness InGaN/GaN green light emitting diodes (LEDs) with in-situ low-temperature GaN (LT-GaN) nucleation layer (NL) and ex-situ sputtered AlN NL on 4-inch patterned sapphire substrate. Compared to green LEDs on LT-GaN (19 nm)/sapphire template, green LEDs on sputtered AlN (19 nm)/template has better crystal quality while larger in-plane compressive strain. As a result, the external quantum efficiency (EQE) of green LEDs on sputtered AlN (19 nm)/sapphire template is lower than that of green LEDs on LT-GaN (19 nm)/sapphire template due to strain-induced quantum-confined Stark effect (QCSE). We show that the in-plane compressive strain of green LEDs on sputtered AlN/sapphire templates can be manipulated by changing thickness of the sputtered AlN NL. As the thickness of sputtered AlN NL changes from 19 nm to 40 nm, the green LED on sputtered AlN (33 nm)/sapphire template exhibits the lowest in-plane compressive stress and the highest EQE. At 20 A/cm(2), the EQE of 526 nm green LEDs on sputtered AlN (33 nm)/sapphire template is 36.4%, about 6.1% larger than that of the green LED on LT-GaN (19 nm)/sapphire template. Our experimental data suggest that high-efficiency green LEDs can be realized by growing InGaN/GaN multiple quantum wells (MQWs) on sputtered AlN/sapphire template with reduced in-plane compressive strain and improved crystal quality. |
format | Online Article Text |
id | pubmed-6401382 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-64013822019-03-08 Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer Hu, Hongpo Zhou, Shengjun Wan, Hui Liu, Xingtong Li, Ning Xu, Haohao Sci Rep Article Here we demonstrate high-brightness InGaN/GaN green light emitting diodes (LEDs) with in-situ low-temperature GaN (LT-GaN) nucleation layer (NL) and ex-situ sputtered AlN NL on 4-inch patterned sapphire substrate. Compared to green LEDs on LT-GaN (19 nm)/sapphire template, green LEDs on sputtered AlN (19 nm)/template has better crystal quality while larger in-plane compressive strain. As a result, the external quantum efficiency (EQE) of green LEDs on sputtered AlN (19 nm)/sapphire template is lower than that of green LEDs on LT-GaN (19 nm)/sapphire template due to strain-induced quantum-confined Stark effect (QCSE). We show that the in-plane compressive strain of green LEDs on sputtered AlN/sapphire templates can be manipulated by changing thickness of the sputtered AlN NL. As the thickness of sputtered AlN NL changes from 19 nm to 40 nm, the green LED on sputtered AlN (33 nm)/sapphire template exhibits the lowest in-plane compressive stress and the highest EQE. At 20 A/cm(2), the EQE of 526 nm green LEDs on sputtered AlN (33 nm)/sapphire template is 36.4%, about 6.1% larger than that of the green LED on LT-GaN (19 nm)/sapphire template. Our experimental data suggest that high-efficiency green LEDs can be realized by growing InGaN/GaN multiple quantum wells (MQWs) on sputtered AlN/sapphire template with reduced in-plane compressive strain and improved crystal quality. Nature Publishing Group UK 2019-03-05 /pmc/articles/PMC6401382/ /pubmed/30837579 http://dx.doi.org/10.1038/s41598-019-40120-9 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Hu, Hongpo Zhou, Shengjun Wan, Hui Liu, Xingtong Li, Ning Xu, Haohao Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer |
title | Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer |
title_full | Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer |
title_fullStr | Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer |
title_full_unstemmed | Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer |
title_short | Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer |
title_sort | effect of strain relaxation on performance of ingan/gan green leds grown on 4-inch sapphire substrate with sputtered aln nucleation layer |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6401382/ https://www.ncbi.nlm.nih.gov/pubmed/30837579 http://dx.doi.org/10.1038/s41598-019-40120-9 |
work_keys_str_mv | AT huhongpo effectofstrainrelaxationonperformanceofingangangreenledsgrownon4inchsapphiresubstratewithsputteredalnnucleationlayer AT zhoushengjun effectofstrainrelaxationonperformanceofingangangreenledsgrownon4inchsapphiresubstratewithsputteredalnnucleationlayer AT wanhui effectofstrainrelaxationonperformanceofingangangreenledsgrownon4inchsapphiresubstratewithsputteredalnnucleationlayer AT liuxingtong effectofstrainrelaxationonperformanceofingangangreenledsgrownon4inchsapphiresubstratewithsputteredalnnucleationlayer AT lining effectofstrainrelaxationonperformanceofingangangreenledsgrownon4inchsapphiresubstratewithsputteredalnnucleationlayer AT xuhaohao effectofstrainrelaxationonperformanceofingangangreenledsgrownon4inchsapphiresubstratewithsputteredalnnucleationlayer |