Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer

Here we demonstrate high-brightness InGaN/GaN green light emitting diodes (LEDs) with in-situ low-temperature GaN (LT-GaN) nucleation layer (NL) and ex-situ sputtered AlN NL on 4-inch patterned sapphire substrate. Compared to green LEDs on LT-GaN (19 nm)/sapphire template, green LEDs on sputtered Al...

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Detalles Bibliográficos
Autores principales: Hu, Hongpo, Zhou, Shengjun, Wan, Hui, Liu, Xingtong, Li, Ning, Xu, Haohao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6401382/
https://www.ncbi.nlm.nih.gov/pubmed/30837579
http://dx.doi.org/10.1038/s41598-019-40120-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6401382/
https://www.ncbi.nlm.nih.gov/pubmed/30837579
http://dx.doi.org/10.1038/s41598-019-40120-9

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