Impact of microscopic In fluctuations on the optical properties of In(x)Ga(1-x)N blue light-emitting diodes assessed by low-energy X-ray fluorescence mapping using synchrotron radiation

Among the III-nitride semiconductors, In(x)Ga(1-x)N is a key material for visible optical devices such as light-emitting diodes (LEDs), laser diodes, and solar cells. Light emission is achieved via electron-hole recombination within the In(x)Ga(1-x)N layer. When In(x)Ga(1-x)N-based blue LEDs were fi...

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Detalles Bibliográficos
Autores principales: Sakaki, Atsushi, Funato, Mitsuru, Miyano, Munehiko, Okazaki, Toshiyuki, Kawakami, Yoichi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6403325/
https://www.ncbi.nlm.nih.gov/pubmed/30842610
http://dx.doi.org/10.1038/s41598-019-39086-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6403325/
https://www.ncbi.nlm.nih.gov/pubmed/30842610
http://dx.doi.org/10.1038/s41598-019-39086-5

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