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Choosing a substrate for the ion irradiation of two-dimensional materials

This study is dedicated to the common problem of how to choose a suitable substrate for ion irradiation of two-dimensional materials in order to achieve specific roles of certain defect formation mechanisms. The estimations include Monte Carlo simulations for He, Ar, Xe, C, N and Si ions, performed...

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Autor principal: Kolesov, Egor A
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6404516/
https://www.ncbi.nlm.nih.gov/pubmed/30873325
http://dx.doi.org/10.3762/bjnano.10.54
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author Kolesov, Egor A
author_facet Kolesov, Egor A
author_sort Kolesov, Egor A
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description This study is dedicated to the common problem of how to choose a suitable substrate for ion irradiation of two-dimensional materials in order to achieve specific roles of certain defect formation mechanisms. The estimations include Monte Carlo simulations for He, Ar, Xe, C, N and Si ions, performed in the incident ion energy range from 100 eV to 250 MeV. Cu, SiO(2), SiC and Al(2)O(3) substrates were analyzed. The considered substrate-related defect formation mechanisms are sputtering, recoil atoms reaching the interface with a non-zero energy, and generation of hot electrons in close proximity of the interface. Additionally, the implantation of sputtered substrate atoms into the 2D material lattice is analyzed. This work is useful both for fundamental studies of irradiation of two-dimensional materials and as a practical guide on choosing the conditions necessary to obtain certain parameters of irradiated materials.
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spelling pubmed-64045162019-03-14 Choosing a substrate for the ion irradiation of two-dimensional materials Kolesov, Egor A Beilstein J Nanotechnol Full Research Paper This study is dedicated to the common problem of how to choose a suitable substrate for ion irradiation of two-dimensional materials in order to achieve specific roles of certain defect formation mechanisms. The estimations include Monte Carlo simulations for He, Ar, Xe, C, N and Si ions, performed in the incident ion energy range from 100 eV to 250 MeV. Cu, SiO(2), SiC and Al(2)O(3) substrates were analyzed. The considered substrate-related defect formation mechanisms are sputtering, recoil atoms reaching the interface with a non-zero energy, and generation of hot electrons in close proximity of the interface. Additionally, the implantation of sputtered substrate atoms into the 2D material lattice is analyzed. This work is useful both for fundamental studies of irradiation of two-dimensional materials and as a practical guide on choosing the conditions necessary to obtain certain parameters of irradiated materials. Beilstein-Institut 2019-02-22 /pmc/articles/PMC6404516/ /pubmed/30873325 http://dx.doi.org/10.3762/bjnano.10.54 Text en Copyright © 2019, Kolesov https://creativecommons.org/licenses/by/4.0https://www.beilstein-journals.org/bjnano/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0). Please note that the reuse, redistribution and reproduction in particular requires that the authors and source are credited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms)
spellingShingle Full Research Paper
Kolesov, Egor A
Choosing a substrate for the ion irradiation of two-dimensional materials
title Choosing a substrate for the ion irradiation of two-dimensional materials
title_full Choosing a substrate for the ion irradiation of two-dimensional materials
title_fullStr Choosing a substrate for the ion irradiation of two-dimensional materials
title_full_unstemmed Choosing a substrate for the ion irradiation of two-dimensional materials
title_short Choosing a substrate for the ion irradiation of two-dimensional materials
title_sort choosing a substrate for the ion irradiation of two-dimensional materials
topic Full Research Paper
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6404516/
https://www.ncbi.nlm.nih.gov/pubmed/30873325
http://dx.doi.org/10.3762/bjnano.10.54
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