Key role of excess atomic volume in structural rearrangements at the front of moving partial dislocations in copper nanocrystals

Here we report on a molecular dynamics simulation of the atomic volume distribution in fcc copper with moving partial dislocations 1/6 〈112〉 {111}. The simulation shows that the leading and trailing partial dislocations surrounding a stacking fault move via local fcc→hcp and hcp→fcc transformations...

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Detalles Bibliográficos
Autores principales: Psakhie, S. G., Zolnikov, K. P., Kryzhevich, D. S., Korchuganov, A. V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6405832/
https://www.ncbi.nlm.nih.gov/pubmed/30846743
http://dx.doi.org/10.1038/s41598-019-40409-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6405832/
https://www.ncbi.nlm.nih.gov/pubmed/30846743
http://dx.doi.org/10.1038/s41598-019-40409-9

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