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Key role of excess atomic volume in structural rearrangements at the front of moving partial dislocations in copper nanocrystals
Here we report on a molecular dynamics simulation of the atomic volume distribution in fcc copper with moving partial dislocations 1/6 〈112〉 {111}. The simulation shows that the leading and trailing partial dislocations surrounding a stacking fault move via local fcc→hcp and hcp→fcc transformations...
Autores principales: | Psakhie, S. G., Zolnikov, K. P., Kryzhevich, D. S., Korchuganov, A. V. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6405832/ https://www.ncbi.nlm.nih.gov/pubmed/30846743 http://dx.doi.org/10.1038/s41598-019-40409-9 |
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