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Defective States in Micro-Crystalline CsPbBr(3) and Their Role on Photoconductivity

Intrinsic defects in CsPbBr(3) microcrystalline films have been studied using thermally stimulated current (TSC) technique in a wide temperature range (100–400 K). Below room temperature, TSC emission is composed by a set of several energy levels, in the range 0.11–0.27 eV, suggesting a quasi-contin...

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Detalles Bibliográficos
Autores principales: Bruzzi, Mara, Gabelloni, Fabio, Calisi, Nicola, Caporali, Stefano, Vinattieri, Anna
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6409602/
https://www.ncbi.nlm.nih.gov/pubmed/30717081
http://dx.doi.org/10.3390/nano9020177
Descripción
Sumario:Intrinsic defects in CsPbBr(3) microcrystalline films have been studied using thermally stimulated current (TSC) technique in a wide temperature range (100–400 K). Below room temperature, TSC emission is composed by a set of several energy levels, in the range 0.11–0.27 eV, suggesting a quasi-continuum distribution of states with almost constant density. Above room temperature, up to 400 K, the temperature range of interest for solar cells, both dark current and photocurrent, are mainly dominated by energy levels in the range 0.40–0.45 eV. Even if measured trap densities are high, in the range 10(13)–10(16) cm(−3), the very small capture cross-sections, about 10(−26) m(2), agree with the high defect tolerance characterizing this material.