Cargando…

Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper

Fully printed and flexible inorganic electrolyte gated transistors (EGTs) on paper with a channel layer based on an interconnected zinc oxide (ZnO) nanoparticle matrix are reported in this work. The required rheological properties and good layer formation after printing are obtained using an eco-fri...

Descripción completa

Detalles Bibliográficos
Autores principales: Carvalho, José Tiago, Dubceac, Viorel, Grey, Paul, Cunha, Inês, Fortunato, Elvira, Martins, Rodrigo, Clausner, Andre, Zschech, Ehrenfried, Pereira, Luís
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6410167/
https://www.ncbi.nlm.nih.gov/pubmed/30704027
http://dx.doi.org/10.3390/nano9020169
_version_ 1783402177670152192
author Carvalho, José Tiago
Dubceac, Viorel
Grey, Paul
Cunha, Inês
Fortunato, Elvira
Martins, Rodrigo
Clausner, Andre
Zschech, Ehrenfried
Pereira, Luís
author_facet Carvalho, José Tiago
Dubceac, Viorel
Grey, Paul
Cunha, Inês
Fortunato, Elvira
Martins, Rodrigo
Clausner, Andre
Zschech, Ehrenfried
Pereira, Luís
author_sort Carvalho, José Tiago
collection PubMed
description Fully printed and flexible inorganic electrolyte gated transistors (EGTs) on paper with a channel layer based on an interconnected zinc oxide (ZnO) nanoparticle matrix are reported in this work. The required rheological properties and good layer formation after printing are obtained using an eco-friendly binder such as ethyl cellulose (EC) to disperse the ZnO nanoparticles. Fully printed devices on glass substrates using a composite solid polymer electrolyte as gate dielectric exhibit saturation mobility above 5 cm(2) V(−1) s(−1) after annealing at 350 °C. Proper optimization of the nanoparticle content in the ink allows for the formation of a ZnO channel layer at a maximum annealing temperature of 150 °C, compatible with paper substrates. These devices show low operation voltages, with a subthreshold slope of 0.21 V dec(−1), a turn on voltage of 1.90 V, a saturation mobility of 0.07 cm(2) V(−1) s(−1) and an I(on)/I(off) ratio of more than three orders of magnitude.
format Online
Article
Text
id pubmed-6410167
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-64101672019-03-11 Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper Carvalho, José Tiago Dubceac, Viorel Grey, Paul Cunha, Inês Fortunato, Elvira Martins, Rodrigo Clausner, Andre Zschech, Ehrenfried Pereira, Luís Nanomaterials (Basel) Article Fully printed and flexible inorganic electrolyte gated transistors (EGTs) on paper with a channel layer based on an interconnected zinc oxide (ZnO) nanoparticle matrix are reported in this work. The required rheological properties and good layer formation after printing are obtained using an eco-friendly binder such as ethyl cellulose (EC) to disperse the ZnO nanoparticles. Fully printed devices on glass substrates using a composite solid polymer electrolyte as gate dielectric exhibit saturation mobility above 5 cm(2) V(−1) s(−1) after annealing at 350 °C. Proper optimization of the nanoparticle content in the ink allows for the formation of a ZnO channel layer at a maximum annealing temperature of 150 °C, compatible with paper substrates. These devices show low operation voltages, with a subthreshold slope of 0.21 V dec(−1), a turn on voltage of 1.90 V, a saturation mobility of 0.07 cm(2) V(−1) s(−1) and an I(on)/I(off) ratio of more than three orders of magnitude. MDPI 2019-01-30 /pmc/articles/PMC6410167/ /pubmed/30704027 http://dx.doi.org/10.3390/nano9020169 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Carvalho, José Tiago
Dubceac, Viorel
Grey, Paul
Cunha, Inês
Fortunato, Elvira
Martins, Rodrigo
Clausner, Andre
Zschech, Ehrenfried
Pereira, Luís
Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper
title Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper
title_full Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper
title_fullStr Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper
title_full_unstemmed Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper
title_short Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper
title_sort fully printed zinc oxide electrolyte-gated transistors on paper
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6410167/
https://www.ncbi.nlm.nih.gov/pubmed/30704027
http://dx.doi.org/10.3390/nano9020169
work_keys_str_mv AT carvalhojosetiago fullyprintedzincoxideelectrolytegatedtransistorsonpaper
AT dubceacviorel fullyprintedzincoxideelectrolytegatedtransistorsonpaper
AT greypaul fullyprintedzincoxideelectrolytegatedtransistorsonpaper
AT cunhaines fullyprintedzincoxideelectrolytegatedtransistorsonpaper
AT fortunatoelvira fullyprintedzincoxideelectrolytegatedtransistorsonpaper
AT martinsrodrigo fullyprintedzincoxideelectrolytegatedtransistorsonpaper
AT clausnerandre fullyprintedzincoxideelectrolytegatedtransistorsonpaper
AT zschechehrenfried fullyprintedzincoxideelectrolytegatedtransistorsonpaper
AT pereiraluis fullyprintedzincoxideelectrolytegatedtransistorsonpaper