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Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper
Fully printed and flexible inorganic electrolyte gated transistors (EGTs) on paper with a channel layer based on an interconnected zinc oxide (ZnO) nanoparticle matrix are reported in this work. The required rheological properties and good layer formation after printing are obtained using an eco-fri...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6410167/ https://www.ncbi.nlm.nih.gov/pubmed/30704027 http://dx.doi.org/10.3390/nano9020169 |
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author | Carvalho, José Tiago Dubceac, Viorel Grey, Paul Cunha, Inês Fortunato, Elvira Martins, Rodrigo Clausner, Andre Zschech, Ehrenfried Pereira, Luís |
author_facet | Carvalho, José Tiago Dubceac, Viorel Grey, Paul Cunha, Inês Fortunato, Elvira Martins, Rodrigo Clausner, Andre Zschech, Ehrenfried Pereira, Luís |
author_sort | Carvalho, José Tiago |
collection | PubMed |
description | Fully printed and flexible inorganic electrolyte gated transistors (EGTs) on paper with a channel layer based on an interconnected zinc oxide (ZnO) nanoparticle matrix are reported in this work. The required rheological properties and good layer formation after printing are obtained using an eco-friendly binder such as ethyl cellulose (EC) to disperse the ZnO nanoparticles. Fully printed devices on glass substrates using a composite solid polymer electrolyte as gate dielectric exhibit saturation mobility above 5 cm(2) V(−1) s(−1) after annealing at 350 °C. Proper optimization of the nanoparticle content in the ink allows for the formation of a ZnO channel layer at a maximum annealing temperature of 150 °C, compatible with paper substrates. These devices show low operation voltages, with a subthreshold slope of 0.21 V dec(−1), a turn on voltage of 1.90 V, a saturation mobility of 0.07 cm(2) V(−1) s(−1) and an I(on)/I(off) ratio of more than three orders of magnitude. |
format | Online Article Text |
id | pubmed-6410167 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-64101672019-03-11 Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper Carvalho, José Tiago Dubceac, Viorel Grey, Paul Cunha, Inês Fortunato, Elvira Martins, Rodrigo Clausner, Andre Zschech, Ehrenfried Pereira, Luís Nanomaterials (Basel) Article Fully printed and flexible inorganic electrolyte gated transistors (EGTs) on paper with a channel layer based on an interconnected zinc oxide (ZnO) nanoparticle matrix are reported in this work. The required rheological properties and good layer formation after printing are obtained using an eco-friendly binder such as ethyl cellulose (EC) to disperse the ZnO nanoparticles. Fully printed devices on glass substrates using a composite solid polymer electrolyte as gate dielectric exhibit saturation mobility above 5 cm(2) V(−1) s(−1) after annealing at 350 °C. Proper optimization of the nanoparticle content in the ink allows for the formation of a ZnO channel layer at a maximum annealing temperature of 150 °C, compatible with paper substrates. These devices show low operation voltages, with a subthreshold slope of 0.21 V dec(−1), a turn on voltage of 1.90 V, a saturation mobility of 0.07 cm(2) V(−1) s(−1) and an I(on)/I(off) ratio of more than three orders of magnitude. MDPI 2019-01-30 /pmc/articles/PMC6410167/ /pubmed/30704027 http://dx.doi.org/10.3390/nano9020169 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Carvalho, José Tiago Dubceac, Viorel Grey, Paul Cunha, Inês Fortunato, Elvira Martins, Rodrigo Clausner, Andre Zschech, Ehrenfried Pereira, Luís Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper |
title | Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper |
title_full | Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper |
title_fullStr | Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper |
title_full_unstemmed | Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper |
title_short | Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper |
title_sort | fully printed zinc oxide electrolyte-gated transistors on paper |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6410167/ https://www.ncbi.nlm.nih.gov/pubmed/30704027 http://dx.doi.org/10.3390/nano9020169 |
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