Multi-Level Cell Properties of a Bilayer Cu(2)O/Al(2)O(3) Resistive Switching Device

Multi-level resistive switching characteristics of a Cu(2)O/Al(2)O(3) bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of t...

Descripción completa

Detalles Bibliográficos
Autores principales: Deuermeier, Jonas, Kiazadeh, Asal, Klein, Andreas, Martins, Rodrigo, Fortunato, Elvira
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6410279/
https://www.ncbi.nlm.nih.gov/pubmed/30791401
http://dx.doi.org/10.3390/nano9020289
Descripción
Sumario:Multi-level resistive switching characteristics of a Cu(2)O/Al(2)O(3) bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide—an unusual property for an oxide semiconductor—are discussed for the first time regarding their role in the resistive switching mechanism.

Ejemplares similares