Multi-Level Cell Properties of a Bilayer Cu(2)O/Al(2)O(3) Resistive Switching Device

Multi-level resistive switching characteristics of a Cu(2)O/Al(2)O(3) bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of t...

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Autores principales: Deuermeier, Jonas, Kiazadeh, Asal, Klein, Andreas, Martins, Rodrigo, Fortunato, Elvira
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6410279/
https://www.ncbi.nlm.nih.gov/pubmed/30791401
http://dx.doi.org/10.3390/nano9020289
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author Deuermeier, Jonas
Kiazadeh, Asal
Klein, Andreas
Martins, Rodrigo
Fortunato, Elvira
author_facet Deuermeier, Jonas
Kiazadeh, Asal
Klein, Andreas
Martins, Rodrigo
Fortunato, Elvira
author_sort Deuermeier, Jonas
collection PubMed
description Multi-level resistive switching characteristics of a Cu(2)O/Al(2)O(3) bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide—an unusual property for an oxide semiconductor—are discussed for the first time regarding their role in the resistive switching mechanism.
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spelling pubmed-64102792019-03-29 Multi-Level Cell Properties of a Bilayer Cu(2)O/Al(2)O(3) Resistive Switching Device Deuermeier, Jonas Kiazadeh, Asal Klein, Andreas Martins, Rodrigo Fortunato, Elvira Nanomaterials (Basel) Article Multi-level resistive switching characteristics of a Cu(2)O/Al(2)O(3) bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide—an unusual property for an oxide semiconductor—are discussed for the first time regarding their role in the resistive switching mechanism. MDPI 2019-02-19 /pmc/articles/PMC6410279/ /pubmed/30791401 http://dx.doi.org/10.3390/nano9020289 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Deuermeier, Jonas
Kiazadeh, Asal
Klein, Andreas
Martins, Rodrigo
Fortunato, Elvira
Multi-Level Cell Properties of a Bilayer Cu(2)O/Al(2)O(3) Resistive Switching Device
title Multi-Level Cell Properties of a Bilayer Cu(2)O/Al(2)O(3) Resistive Switching Device
title_full Multi-Level Cell Properties of a Bilayer Cu(2)O/Al(2)O(3) Resistive Switching Device
title_fullStr Multi-Level Cell Properties of a Bilayer Cu(2)O/Al(2)O(3) Resistive Switching Device
title_full_unstemmed Multi-Level Cell Properties of a Bilayer Cu(2)O/Al(2)O(3) Resistive Switching Device
title_short Multi-Level Cell Properties of a Bilayer Cu(2)O/Al(2)O(3) Resistive Switching Device
title_sort multi-level cell properties of a bilayer cu(2)o/al(2)o(3) resistive switching device
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6410279/
https://www.ncbi.nlm.nih.gov/pubmed/30791401
http://dx.doi.org/10.3390/nano9020289
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