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Multi-Level Cell Properties of a Bilayer Cu(2)O/Al(2)O(3) Resistive Switching Device

Multi-level resistive switching characteristics of a Cu(2)O/Al(2)O(3) bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of t...

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Detalles Bibliográficos
Autores principales:	Deuermeier, Jonas, Kiazadeh, Asal, Klein, Andreas, Martins, Rodrigo, Fortunato, Elvira
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6410279/ https://www.ncbi.nlm.nih.gov/pubmed/30791401 http://dx.doi.org/10.3390/nano9020289

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