Cargando…
Overcoming the thermal regime for the electric-field driven Mott transition in vanadium sesquioxide
The complex interplay among electronic, magnetic and lattice degrees of freedom in Mott-Hubbard materials leads to different types of insulator-to-metal transitions (IMT) which can be triggered by temperature, pressure, light irradiation and electric field. However, several questions remain open con...
Autores principales: | Giorgianni, Flavio, Sakai, Joe, Lupi, Stefano |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6411733/ https://www.ncbi.nlm.nih.gov/pubmed/30858368 http://dx.doi.org/10.1038/s41467-019-09137-6 |
Ejemplares similares
-
Controlling metal–insulator transitions in reactively sputtered vanadium sesquioxide thin films through structure and stoichiometry
por: Thorsteinsson, Einar B., et al.
Publicado: (2021) -
Thermally and Optically Activated Migration of Charge Carriers in Alkali Metal Sesquioxides
por: Adlung, Matthias, et al.
Publicado: (2022) -
On the Action of the Hydrated Sesquioxide of Iron on Arsenic
por: Maclagan, Douglas
Publicado: (1840) -
Centrifugal Microfluidic Synthesis of Nickel Sesquioxide Nanoparticles
por: Mou, Jiayou, et al.
Publicado: (2023) -
Synthesis and Evaluation of Novel Organogermanium Sesquioxides As Antitumor Agents
por: Zhang, Chun Li, et al.
Publicado: (2009)