Compensation for Process and Temperature Dependency in a CMOS Image Sensor

This paper analyzes and compensates for process and temperature dependency among a (Complementary Metal Oxide Semiconductor) CMOS image sensor (CIS) array. Both the analysis and compensation are supported with experimental results on the CIS’s dark current, dark signal non-uniformity (DSNU), and conversion gain (CG). To model and to compensate for process variations, process sensors based on pixel source follower (SF)’s transconductance g(m)(,SF) have been proposed to model and to be compared against the measurement results of SF gain A(SF). In addition, A(SF)’s thermal dependency has been analyzed in detail. To provide thermal information required for temperature compensation, six scattered bipolar junction transistor (BJT)-based temperature sensors replace six image pixels inside the array. They are measured to have an untrimmed inaccuracy within ±0.5 °C. Dark signal and CG’s thermal dependencies are compensated using the on-chip temperature sensors by at least 79% and 87%, respectively.