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High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector

We propose the narrowband perfect absorbers with enormously high fabrication tolerance, which consists of a low-contrast grating and a finite distributed Bragg reflector (DBR) layer with an ultrathin absorbing medium (graphene). It is numerically shown that the proposed perfect absorber outperforms...

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Autores principales: Lee, Sangjun, Heo, Hyungjun, Kim, Sangin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6414689/
https://www.ncbi.nlm.nih.gov/pubmed/30862879
http://dx.doi.org/10.1038/s41598-019-40945-4
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author Lee, Sangjun
Heo, Hyungjun
Kim, Sangin
author_facet Lee, Sangjun
Heo, Hyungjun
Kim, Sangin
author_sort Lee, Sangjun
collection PubMed
description We propose the narrowband perfect absorbers with enormously high fabrication tolerance, which consists of a low-contrast grating and a finite distributed Bragg reflector (DBR) layer with an ultrathin absorbing medium (graphene). It is numerically shown that the proposed perfect absorber outperforms the previously proposed schemes in fabrication tolerance. According to the rigorous coupled wave analysis (RCWA) and coupled mode theory (CMT) fitting, over a considerably wide range of grating width and thickness, the proposed absorber provides a proper ratio of leakage rate to loss rate while preserving resonant condition, so that almost perfect absorption (>99.9%) can be obtained. This result is attributed to the strong electric field confinement in the DBR region rather than the grating layer owing to lower index of grating compared to DBR. In addition, without degrading the fabrication tolerance, the bandwidth of the proposed absorber can be controlled by the DBR thickness (the number of pairs) and a narrow absorbing bandwidth of sub-nanometer is achieved with 8.5 Si/SiO(2) pair stacked DBR.
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spelling pubmed-64146892019-03-14 High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector Lee, Sangjun Heo, Hyungjun Kim, Sangin Sci Rep Article We propose the narrowband perfect absorbers with enormously high fabrication tolerance, which consists of a low-contrast grating and a finite distributed Bragg reflector (DBR) layer with an ultrathin absorbing medium (graphene). It is numerically shown that the proposed perfect absorber outperforms the previously proposed schemes in fabrication tolerance. According to the rigorous coupled wave analysis (RCWA) and coupled mode theory (CMT) fitting, over a considerably wide range of grating width and thickness, the proposed absorber provides a proper ratio of leakage rate to loss rate while preserving resonant condition, so that almost perfect absorption (>99.9%) can be obtained. This result is attributed to the strong electric field confinement in the DBR region rather than the grating layer owing to lower index of grating compared to DBR. In addition, without degrading the fabrication tolerance, the bandwidth of the proposed absorber can be controlled by the DBR thickness (the number of pairs) and a narrow absorbing bandwidth of sub-nanometer is achieved with 8.5 Si/SiO(2) pair stacked DBR. Nature Publishing Group UK 2019-03-12 /pmc/articles/PMC6414689/ /pubmed/30862879 http://dx.doi.org/10.1038/s41598-019-40945-4 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Lee, Sangjun
Heo, Hyungjun
Kim, Sangin
High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector
title High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector
title_full High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector
title_fullStr High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector
title_full_unstemmed High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector
title_short High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector
title_sort high fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed bragg reflector
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6414689/
https://www.ncbi.nlm.nih.gov/pubmed/30862879
http://dx.doi.org/10.1038/s41598-019-40945-4
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