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High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector
We propose the narrowband perfect absorbers with enormously high fabrication tolerance, which consists of a low-contrast grating and a finite distributed Bragg reflector (DBR) layer with an ultrathin absorbing medium (graphene). It is numerically shown that the proposed perfect absorber outperforms...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6414689/ https://www.ncbi.nlm.nih.gov/pubmed/30862879 http://dx.doi.org/10.1038/s41598-019-40945-4 |
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author | Lee, Sangjun Heo, Hyungjun Kim, Sangin |
author_facet | Lee, Sangjun Heo, Hyungjun Kim, Sangin |
author_sort | Lee, Sangjun |
collection | PubMed |
description | We propose the narrowband perfect absorbers with enormously high fabrication tolerance, which consists of a low-contrast grating and a finite distributed Bragg reflector (DBR) layer with an ultrathin absorbing medium (graphene). It is numerically shown that the proposed perfect absorber outperforms the previously proposed schemes in fabrication tolerance. According to the rigorous coupled wave analysis (RCWA) and coupled mode theory (CMT) fitting, over a considerably wide range of grating width and thickness, the proposed absorber provides a proper ratio of leakage rate to loss rate while preserving resonant condition, so that almost perfect absorption (>99.9%) can be obtained. This result is attributed to the strong electric field confinement in the DBR region rather than the grating layer owing to lower index of grating compared to DBR. In addition, without degrading the fabrication tolerance, the bandwidth of the proposed absorber can be controlled by the DBR thickness (the number of pairs) and a narrow absorbing bandwidth of sub-nanometer is achieved with 8.5 Si/SiO(2) pair stacked DBR. |
format | Online Article Text |
id | pubmed-6414689 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-64146892019-03-14 High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector Lee, Sangjun Heo, Hyungjun Kim, Sangin Sci Rep Article We propose the narrowband perfect absorbers with enormously high fabrication tolerance, which consists of a low-contrast grating and a finite distributed Bragg reflector (DBR) layer with an ultrathin absorbing medium (graphene). It is numerically shown that the proposed perfect absorber outperforms the previously proposed schemes in fabrication tolerance. According to the rigorous coupled wave analysis (RCWA) and coupled mode theory (CMT) fitting, over a considerably wide range of grating width and thickness, the proposed absorber provides a proper ratio of leakage rate to loss rate while preserving resonant condition, so that almost perfect absorption (>99.9%) can be obtained. This result is attributed to the strong electric field confinement in the DBR region rather than the grating layer owing to lower index of grating compared to DBR. In addition, without degrading the fabrication tolerance, the bandwidth of the proposed absorber can be controlled by the DBR thickness (the number of pairs) and a narrow absorbing bandwidth of sub-nanometer is achieved with 8.5 Si/SiO(2) pair stacked DBR. Nature Publishing Group UK 2019-03-12 /pmc/articles/PMC6414689/ /pubmed/30862879 http://dx.doi.org/10.1038/s41598-019-40945-4 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Lee, Sangjun Heo, Hyungjun Kim, Sangin High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector |
title | High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector |
title_full | High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector |
title_fullStr | High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector |
title_full_unstemmed | High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector |
title_short | High fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed Bragg reflector |
title_sort | high fabrication-tolerant narrowband perfect graphene absorber based on guided-mode resonance in distributed bragg reflector |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6414689/ https://www.ncbi.nlm.nih.gov/pubmed/30862879 http://dx.doi.org/10.1038/s41598-019-40945-4 |
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