Cargando…
Intrinsic Thermal conductivities of monolayer transition metal dichalcogenides MX(2) (M = Mo, W; X = S, Se, Te)
The successful synthesis of the single to few layer transition metal dichalcogenides has opened a new era in the nanoelectronics. For their efficient implementations in the electronic devices while taking care of their overheating issues, the characterization of their thermal transport properties is...
Autores principales: | Zulfiqar, Muhammad, Zhao, Yinchang, Li, Geng, Li, ZhengCao, Ni, Jun |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6418116/ https://www.ncbi.nlm.nih.gov/pubmed/30872639 http://dx.doi.org/10.1038/s41598-019-40882-2 |
Ejemplares similares
-
Intriguing interfacial characteristics of the CS contact with MX(2) (M = Mo, W; X = S, Se, Te) and MXY ((X ≠ Y) = S, Se, Te) monolayers
por: Khan, H., et al.
Publicado: (2022) -
Charge-induced electromechanical actuation of Mo- and W-dichalcogenide monolayers
por: Van Thanh, Vuong, et al.
Publicado: (2018) -
Vacancy impacts on electronic and mechanical properties of MX2 (M = Mo, W and X = S, Se) monolayers
por: Kazemi, Seyedeh Alieh, et al.
Publicado: (2023) -
Effects of temperature and intrinsic structural defects on mechanical properties and thermal conductivities of InSe monolayers
por: Pham, Van-Trung, et al.
Publicado: (2020) -
Transport and Photoelectric Properties
of 2D Silicene/MX(2) (M = Mo, W; X = S, Se) Heterostructures
por: Wang, Yuxiu, et al.
Publicado: (2018)