Silicon Nanowire Heterojunction Solar Cells with an Al(2)O(3) Passivation Film Fabricated by Atomic Layer Deposition

Silicon nanowires (SiNWs) show a great potential for energy applications because of the optical confinement effect, which enables the fabrication of highly efficient and thin crystalline silicon (c-Si) solar cells. Since a 10-μm-long SiNW array can absorb sufficient solar light less than 1200 nm, the 10-μm-long SiNW was fabricated on Si wafer to eliminate the influence of the Si wafer. On the other hand, Surface passivation of the SiNWs is a crucial problem that needs to be solved to reduce surface recombination and enable the application of SiNWs to c-Si solar cells. In this study, aluminum oxide (Al(2)O(3)) was fabricated by atomic layer deposition for the passivation of dangling bonds. However, owing to a complete covering of the SiNWs with Al(2)O(3), the carriers could not move to the external circuit. Therefore, chemical–mechanical polishing was performed to uniformly remove the oxide from the top of the SiNWs. A heterojunction solar cell with an efficiency of 1.6% was successfully fabricated using amorphous silicon (a-Si). The internal quantum efficiencies (IQE) of the SiNW and c-Si solar cells were discussed. In the wavelength region below 340 nm, the IQE of the SiNW solar cell is higher than that of the c-Si device, which results in an increase of the absorption of the SiNW cells, suggesting that SiNWs are promising for crystalline-silicon thinning.