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Magnetization-polarization cross-control near room temperature in hexaferrite single crystals

Mutual control of the electricity and magnetism in terms of magnetic (H) and electric (E) fields, the magnetoelectric (ME) effect, offers versatile low power consumption alternatives to current data storage, logic gate, and spintronic devices. Despite its importance, E-field control over magnetizati...

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Detalles Bibliográficos
Autores principales: Kocsis, V., Nakajima, T., Matsuda, M., Kikkawa, A., Kaneko, Y., Takashima, J., Kakurai, K., Arima, T., Kagawa, F., Tokunaga, Y., Tokura, Y., Taguchi, Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6423030/
https://www.ncbi.nlm.nih.gov/pubmed/30886147
http://dx.doi.org/10.1038/s41467-019-09205-x
Descripción
Sumario:Mutual control of the electricity and magnetism in terms of magnetic (H) and electric (E) fields, the magnetoelectric (ME) effect, offers versatile low power consumption alternatives to current data storage, logic gate, and spintronic devices. Despite its importance, E-field control over magnetization (M) with significant magnitude was observed only at low temperatures. Here we have successfully stabilized a simultaneously ferrimagnetic and ferroelectric phase in a Y-type hexaferrite single crystal up to 450 K, and demonstrated the reversal of large non-volatile M by E field close to room temperature. Manipulation of the magnetic domains by E field is directly visualized at room temperature by using magnetic force microscopy. The present achievement provides an important step towards the application of ME multiferroics.