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Memory phototransistors based on exponential-association photoelectric conversion law

Ultraweak light detectors have wide-ranging important applications such as astronomical observation, remote sensing, laser ranging, and night vision. Current commercial ultraweak light detectors are commonly based on a photomultiplier tube or an avalanche photodiode, and they are incompatible with m...

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Autores principales: Shao, Zhibin, Jiang, Tianhao, Zhang, Xiujuan, Zhang, Xiaohong, Wu, Xiaofeng, Xia, Feifei, Xiong, Shiyun, Lee, Shuit-Tong, Jie, Jiansheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6426936/
https://www.ncbi.nlm.nih.gov/pubmed/30894530
http://dx.doi.org/10.1038/s41467-019-09206-w
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author Shao, Zhibin
Jiang, Tianhao
Zhang, Xiujuan
Zhang, Xiaohong
Wu, Xiaofeng
Xia, Feifei
Xiong, Shiyun
Lee, Shuit-Tong
Jie, Jiansheng
author_facet Shao, Zhibin
Jiang, Tianhao
Zhang, Xiujuan
Zhang, Xiaohong
Wu, Xiaofeng
Xia, Feifei
Xiong, Shiyun
Lee, Shuit-Tong
Jie, Jiansheng
author_sort Shao, Zhibin
collection PubMed
description Ultraweak light detectors have wide-ranging important applications such as astronomical observation, remote sensing, laser ranging, and night vision. Current commercial ultraweak light detectors are commonly based on a photomultiplier tube or an avalanche photodiode, and they are incompatible with microelectronic devices for digital imaging applications, because of their high operating voltage and bulky size. Herein, we develop a memory phototransistor for ultraweak light detection, by exploiting the charge-storage accumulative effect in CdS nanoribbon. The memory phototransistors break the power law of traditional photodetectors and follow a time-dependent exponential-association photoelectric conversion law. Significantly, the memory phototransistors exhibit ultrahigh responsivity of 3.8 × 10(9) A W(−1) and detectivity of 7.7 × 10(22) Jones. As a result, the memory phototransistors are able to detect ultraweak light of 6 nW cm(−2) with an extremely high sensitivity of 4 × 10(7). The proposed memory phototransistors offer a design concept for ultraweak light sensing devices.
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spelling pubmed-64269362019-03-22 Memory phototransistors based on exponential-association photoelectric conversion law Shao, Zhibin Jiang, Tianhao Zhang, Xiujuan Zhang, Xiaohong Wu, Xiaofeng Xia, Feifei Xiong, Shiyun Lee, Shuit-Tong Jie, Jiansheng Nat Commun Article Ultraweak light detectors have wide-ranging important applications such as astronomical observation, remote sensing, laser ranging, and night vision. Current commercial ultraweak light detectors are commonly based on a photomultiplier tube or an avalanche photodiode, and they are incompatible with microelectronic devices for digital imaging applications, because of their high operating voltage and bulky size. Herein, we develop a memory phototransistor for ultraweak light detection, by exploiting the charge-storage accumulative effect in CdS nanoribbon. The memory phototransistors break the power law of traditional photodetectors and follow a time-dependent exponential-association photoelectric conversion law. Significantly, the memory phototransistors exhibit ultrahigh responsivity of 3.8 × 10(9) A W(−1) and detectivity of 7.7 × 10(22) Jones. As a result, the memory phototransistors are able to detect ultraweak light of 6 nW cm(−2) with an extremely high sensitivity of 4 × 10(7). The proposed memory phototransistors offer a design concept for ultraweak light sensing devices. Nature Publishing Group UK 2019-03-20 /pmc/articles/PMC6426936/ /pubmed/30894530 http://dx.doi.org/10.1038/s41467-019-09206-w Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Shao, Zhibin
Jiang, Tianhao
Zhang, Xiujuan
Zhang, Xiaohong
Wu, Xiaofeng
Xia, Feifei
Xiong, Shiyun
Lee, Shuit-Tong
Jie, Jiansheng
Memory phototransistors based on exponential-association photoelectric conversion law
title Memory phototransistors based on exponential-association photoelectric conversion law
title_full Memory phototransistors based on exponential-association photoelectric conversion law
title_fullStr Memory phototransistors based on exponential-association photoelectric conversion law
title_full_unstemmed Memory phototransistors based on exponential-association photoelectric conversion law
title_short Memory phototransistors based on exponential-association photoelectric conversion law
title_sort memory phototransistors based on exponential-association photoelectric conversion law
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6426936/
https://www.ncbi.nlm.nih.gov/pubmed/30894530
http://dx.doi.org/10.1038/s41467-019-09206-w
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