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Memory phototransistors based on exponential-association photoelectric conversion law
Ultraweak light detectors have wide-ranging important applications such as astronomical observation, remote sensing, laser ranging, and night vision. Current commercial ultraweak light detectors are commonly based on a photomultiplier tube or an avalanche photodiode, and they are incompatible with m...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6426936/ https://www.ncbi.nlm.nih.gov/pubmed/30894530 http://dx.doi.org/10.1038/s41467-019-09206-w |
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author | Shao, Zhibin Jiang, Tianhao Zhang, Xiujuan Zhang, Xiaohong Wu, Xiaofeng Xia, Feifei Xiong, Shiyun Lee, Shuit-Tong Jie, Jiansheng |
author_facet | Shao, Zhibin Jiang, Tianhao Zhang, Xiujuan Zhang, Xiaohong Wu, Xiaofeng Xia, Feifei Xiong, Shiyun Lee, Shuit-Tong Jie, Jiansheng |
author_sort | Shao, Zhibin |
collection | PubMed |
description | Ultraweak light detectors have wide-ranging important applications such as astronomical observation, remote sensing, laser ranging, and night vision. Current commercial ultraweak light detectors are commonly based on a photomultiplier tube or an avalanche photodiode, and they are incompatible with microelectronic devices for digital imaging applications, because of their high operating voltage and bulky size. Herein, we develop a memory phototransistor for ultraweak light detection, by exploiting the charge-storage accumulative effect in CdS nanoribbon. The memory phototransistors break the power law of traditional photodetectors and follow a time-dependent exponential-association photoelectric conversion law. Significantly, the memory phototransistors exhibit ultrahigh responsivity of 3.8 × 10(9) A W(−1) and detectivity of 7.7 × 10(22) Jones. As a result, the memory phototransistors are able to detect ultraweak light of 6 nW cm(−2) with an extremely high sensitivity of 4 × 10(7). The proposed memory phototransistors offer a design concept for ultraweak light sensing devices. |
format | Online Article Text |
id | pubmed-6426936 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-64269362019-03-22 Memory phototransistors based on exponential-association photoelectric conversion law Shao, Zhibin Jiang, Tianhao Zhang, Xiujuan Zhang, Xiaohong Wu, Xiaofeng Xia, Feifei Xiong, Shiyun Lee, Shuit-Tong Jie, Jiansheng Nat Commun Article Ultraweak light detectors have wide-ranging important applications such as astronomical observation, remote sensing, laser ranging, and night vision. Current commercial ultraweak light detectors are commonly based on a photomultiplier tube or an avalanche photodiode, and they are incompatible with microelectronic devices for digital imaging applications, because of their high operating voltage and bulky size. Herein, we develop a memory phototransistor for ultraweak light detection, by exploiting the charge-storage accumulative effect in CdS nanoribbon. The memory phototransistors break the power law of traditional photodetectors and follow a time-dependent exponential-association photoelectric conversion law. Significantly, the memory phototransistors exhibit ultrahigh responsivity of 3.8 × 10(9) A W(−1) and detectivity of 7.7 × 10(22) Jones. As a result, the memory phototransistors are able to detect ultraweak light of 6 nW cm(−2) with an extremely high sensitivity of 4 × 10(7). The proposed memory phototransistors offer a design concept for ultraweak light sensing devices. Nature Publishing Group UK 2019-03-20 /pmc/articles/PMC6426936/ /pubmed/30894530 http://dx.doi.org/10.1038/s41467-019-09206-w Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Shao, Zhibin Jiang, Tianhao Zhang, Xiujuan Zhang, Xiaohong Wu, Xiaofeng Xia, Feifei Xiong, Shiyun Lee, Shuit-Tong Jie, Jiansheng Memory phototransistors based on exponential-association photoelectric conversion law |
title | Memory phototransistors based on exponential-association photoelectric conversion law |
title_full | Memory phototransistors based on exponential-association photoelectric conversion law |
title_fullStr | Memory phototransistors based on exponential-association photoelectric conversion law |
title_full_unstemmed | Memory phototransistors based on exponential-association photoelectric conversion law |
title_short | Memory phototransistors based on exponential-association photoelectric conversion law |
title_sort | memory phototransistors based on exponential-association photoelectric conversion law |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6426936/ https://www.ncbi.nlm.nih.gov/pubmed/30894530 http://dx.doi.org/10.1038/s41467-019-09206-w |
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