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Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions correspon...

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Detalles Bibliográficos
Autores principales: Chongthanaphisut, Phunvira, Bac, Seul-Ki, Choi, Seonghoon, Lee, Kyung Jae, Chang, Jihoon, Choi, Suho, Lee, Sanghoon, Nnaji, Moses, Liu, X., Dobrowolska, M., Furdyna, J. K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6427040/
https://www.ncbi.nlm.nih.gov/pubmed/30894576
http://dx.doi.org/10.1038/s41598-019-41138-9
Descripción
Sumario:We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.