Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions correspon...

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Autores principales: Chongthanaphisut, Phunvira, Bac, Seul-Ki, Choi, Seonghoon, Lee, Kyung Jae, Chang, Jihoon, Choi, Suho, Lee, Sanghoon, Nnaji, Moses, Liu, X., Dobrowolska, M., Furdyna, J. K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
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Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6427040/
https://www.ncbi.nlm.nih.gov/pubmed/30894576
http://dx.doi.org/10.1038/s41598-019-41138-9
_version_ 1783405125439586304
author Chongthanaphisut, Phunvira
Bac, Seul-Ki
Choi, Seonghoon
Lee, Kyung Jae
Chang, Jihoon
Choi, Suho
Lee, Sanghoon
Nnaji, Moses
Liu, X.
Dobrowolska, M.
Furdyna, J. K.
author_facet Chongthanaphisut, Phunvira
Bac, Seul-Ki
Choi, Seonghoon
Lee, Kyung Jae
Chang, Jihoon
Choi, Suho
Lee, Sanghoon
Nnaji, Moses
Liu, X.
Dobrowolska, M.
Furdyna, J. K.
author_sort Chongthanaphisut, Phunvira
collection PubMed
description We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.
format Online
Article
Text
id pubmed-6427040
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-64270402019-03-28 Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy Chongthanaphisut, Phunvira Bac, Seul-Ki Choi, Seonghoon Lee, Kyung Jae Chang, Jihoon Choi, Suho Lee, Sanghoon Nnaji, Moses Liu, X. Dobrowolska, M. Furdyna, J. K. Sci Rep Article We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers. Nature Publishing Group UK 2019-03-18 /pmc/articles/PMC6427040/ /pubmed/30894576 http://dx.doi.org/10.1038/s41598-019-41138-9 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Chongthanaphisut, Phunvira
Bac, Seul-Ki
Choi, Seonghoon
Lee, Kyung Jae
Chang, Jihoon
Choi, Suho
Lee, Sanghoon
Nnaji, Moses
Liu, X.
Dobrowolska, M.
Furdyna, J. K.
Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy
title Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy
title_full Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy
title_fullStr Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy
title_full_unstemmed Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy
title_short Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy
title_sort interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6427040/
https://www.ncbi.nlm.nih.gov/pubmed/30894576
http://dx.doi.org/10.1038/s41598-019-41138-9
work_keys_str_mv AT chongthanaphisutphunvira interlayerexchangecouplinginferromagneticsemiconductortrilayerswithoutofplanemagneticanisotropy
AT bacseulki interlayerexchangecouplinginferromagneticsemiconductortrilayerswithoutofplanemagneticanisotropy
AT choiseonghoon interlayerexchangecouplinginferromagneticsemiconductortrilayerswithoutofplanemagneticanisotropy
AT leekyungjae interlayerexchangecouplinginferromagneticsemiconductortrilayerswithoutofplanemagneticanisotropy
AT changjihoon interlayerexchangecouplinginferromagneticsemiconductortrilayerswithoutofplanemagneticanisotropy
AT choisuho interlayerexchangecouplinginferromagneticsemiconductortrilayerswithoutofplanemagneticanisotropy
AT leesanghoon interlayerexchangecouplinginferromagneticsemiconductortrilayerswithoutofplanemagneticanisotropy
AT nnajimoses interlayerexchangecouplinginferromagneticsemiconductortrilayerswithoutofplanemagneticanisotropy
AT liux interlayerexchangecouplinginferromagneticsemiconductortrilayerswithoutofplanemagneticanisotropy
AT dobrowolskam interlayerexchangecouplinginferromagneticsemiconductortrilayerswithoutofplanemagneticanisotropy
AT furdynajk interlayerexchangecouplinginferromagneticsemiconductortrilayerswithoutofplanemagneticanisotropy

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