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P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping

Nitrogen-doped lithium niobate (LiNbO(3):N) thin films were successfully fabricated on a Si-substrate using a nitrogen plasma beam supplied through a radio-frequency plasma apparatus as a dopant source via a pulsed laser deposition (PLD). The films were then characterized using X-Ray Diffraction (XR...

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Detalles Bibliográficos
Autores principales: Li, Wencan, Cui, Jiao, Wang, Weiwei, Zheng, Dahuai, Jia, Longfei, Saeed, Shahzad, Liu, Hongde, Rupp, Romano, Kong, Yongfa, Xu, Jingjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6427647/
https://www.ncbi.nlm.nih.gov/pubmed/30862014
http://dx.doi.org/10.3390/ma12050819
Descripción
Sumario:Nitrogen-doped lithium niobate (LiNbO(3):N) thin films were successfully fabricated on a Si-substrate using a nitrogen plasma beam supplied through a radio-frequency plasma apparatus as a dopant source via a pulsed laser deposition (PLD). The films were then characterized using X-Ray Diffraction (XRD) as polycrystalline with the predominant orientations of (012) and (104). The perfect surface appearance of the film was investigated by atomic force microscopy and Hall-effect measurements revealed a rare p-type conductivity in the LiNbO(3):N thin film. The hole concentration was 7.31 × 10(15) cm(−3) with a field-effect mobility of 266 cm(2)V(−1)s(−1). X-ray Photoelectron Spectroscopy (XPS) indicated that the atom content of nitrogen was 0.87%; N atoms were probably substituted for O sites, which contributed to the p-type conductivity. The realization of p-type LiNbO(3):N thin films grown on the Si substrate lead to improvements in the manufacturing of novel optoelectronic devices.