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Direct Growth of Graphene on Insulator Using Liquid Precursor Via an Intermediate Nanostructured State Carbon Nanotube

Synthesis of high-quality graphene layers on insulating substrates is highly desirable for future graphene-based high-speed electronics. Besides the use of gaseous hydrocarbon sources, solid and liquid hydrocarbon sources have recently shown great promises for high-quality graphene growth. Here, I r...

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Detalles Bibliográficos
Autor principal: Nayak, Pramoda K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6430270/
https://www.ncbi.nlm.nih.gov/pubmed/30903401
http://dx.doi.org/10.1186/s11671-019-2935-9
Descripción
Sumario:Synthesis of high-quality graphene layers on insulating substrates is highly desirable for future graphene-based high-speed electronics. Besides the use of gaseous hydrocarbon sources, solid and liquid hydrocarbon sources have recently shown great promises for high-quality graphene growth. Here, I report chemical vapor deposition growth of mono- to few-layer graphene directly on SiO(2) substrate using ethanol as liquid hydrocarbon feedstock. The growth process of graphene has been systematically investigated as a function of annealing temperature as well as different seed layers. Interestingly, it was found that the carbon atoms produced by thermal decomposition of ethanol form sp(2) carbon network on SiO(2) surface thereby forming nanographene flakes via an intermediate carbon-based nanostructured state carbon nanotube. This work might pave the way to an understanding for economical and catalyst-free graphene growth compatible with current silicon-processing techniques, and it can be applied on a variety of insulating surfaces including quartz, sapphire, and fused silica. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.1186/s11671-019-2935-9) contains supplementary material, which is available to authorized users.